PRESENTATIONS

J. S. Harris, Jr.

    Publications: 1984 1985 1986 1987 1988 1989 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001

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  1. J. S. Harris, Jr., "GaAs Technology: Past, Present and Future," Stanford Annual Conference on Process and Device Modeling, Stanford University, Aug. 1984.

  2. J. S. Harris, Jr. and T. Heirl, "Three-Inch Non-Indium Bonded Technology for MBE Growth," Selectively Doped Heterostructure Transistor Conference, Santa Barbara, CA, Dec. 1984.

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  3. K. Yoh and J. S. Harris, Jr., "Effects of Temperature on Threshold Voltage in MODFETs," WOCSEMMAD 1985, Ft. Lauderdale, Florida, Feb. 1985.

  4. E. S. Hellman and J. S. Harris, Jr., "The Dispersion Relation for Energetic Polarons Confined to One Dimension," American Physical Society Meeting, Baltimore, Maryland, March 1985.

  5. J. S. Harris, Jr., "Molecular Beam Epitaxy," Stanford Annual Conference on Process and Device Modeling, Stanford University, Aug. 1985.

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  6. D. Liu, Y. C. Pao, P. Pitner and J. S. Harris, Jr., "Role of In-Bonding and Hydrogen Background on Deep Level Traps in MBE GaAs," WOCSEMMAD 1986, San Francisco, CA, Feb. 1986.

  7. J. S. Harris, Jr., H. H. Lin and P. M. Pitner, "Emitter-Base Junction Surface Leakage and its Impact for Scaled Heterojunction Bipolar Transistors," WOCSEMMAD 1986, San Francisco, CA, Feb. 1986.

  8. Y. C. Pao, D. Liu, W. S. Lee and J. S. Harris, Jr., "Effect of Hydrogen on Undoped and Lightly Si Doped GaAs Grown by Molecular Beam Epitaxy," WOCSEMMAD 1986, San Francisco, CA, Feb. 1986.

  9. E. S. Hellman and J. S. Harris, Jr., "Slow Polarons Below the Phonon Emission Threshold in High Magnetic Fields or in One Dimensional Semiconductor Heterostructures," American Physical Society, Las Vegas, April 1986.

  10. S. M. Koch, S. J. Rosner, D. Schlom and J. S. Harris, Jr., "The Growth of GaAs on Si by Molecular Beam Epitaxy," Materials Research Society Meeting, Palo Alto, CA, April 1986.

  11. S. J. Rosner, S. M. Koch, S. Laderman and J. S. Harris, Jr., "Microstructure of Thin Layers of MBE-Grown GaAs on Si Substrates," Materials Research Society Meeting, Palo Alto, CA, April 1986.

  12. D. Liu, W. S. Lee and J. S. Harris, Jr., "Hydrogen Background Pressure Effects on the Deep Traps in MBE Grown-N-Type GaAs," Materials Research Society Meeting, Palo Alto, CA, April 1986.

  13. J. S. Harris, Jr., "GaAs on Si, The Best of Each or Worst of Both?" Santa Clara IEEE Section, Nov. 1986 (Invited).

  14. K. Yoh and J. S. Harris, "New Materials and Structures for Improved Complementary MODFETs," HEMT Workshop, Kona, Hawaii, Dec. 1986.

  15. Y. C. Pao, J. S. Harris, C. Nishimoto, R. Norton, S. Bandy, H. Cooke, J. Archer, "Gate Recess Induced Parasitic Effects on AlGaAs/GaAs MODFETs," HEMT Workshop, Kona, Hawaii, Dec. 1986.

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  16. K. Yoh and J. S. Harris, Jr., "Complementary MODFET Circuit using Selective Molecular Beam Epitaxy," WOCSEMMAD 1987, Hilton Head, South Carolina, March 1987.

  17. Y. C. Pao, H. Cooke, J. S. Harris, Jr., "Gate Recess Induced Parasitic Effect in Al/GaAs MODFET," WOCSEMMAD 1987, Hilton Head, South Carolina, March 1987.

  18. Y. C. Pao, J. S. Harris, Jr., L. Parechanian and E. R. Weber, "Material and Device Characterization of (110) GaAs/AlGaAs Grown by MBE," WOCSEMMAD 1987, Hilton Head, South Carolina, March 1987.

  19. K. Yoh, J. S. Harris, "A p-channel Strained Quantum Well Modulation-doped FET", Japan Society of Applied Physics Meeting, Tokyo, March 1987.

  20. S. Y. Chou, J. S. Harris, Jr., R. F. W. Pease, D. Allee, P. de la Houssaye, M. McCord, D. Narum and D. Schlom, "Sub-100nm Fabrication Technology and Devices by Combining Electron Beam Lithography and Molecular Beam Epitaxy" American Physical Society Meeting, New York, March 1987 (Invited).

  21. J. S. Harris, Jr., S. M. Koch and S. J. Rosner, "The Nucleation and Growth of GaAs on Si", Materials Research Society Meeting, Anaheim, CA, April 1987 (Invited).

  22. S. J. Rosner, S. M. Koch and J. S. Harris, Jr., "Structural Characterization of Thin, Low Temperature Films of GaAs on Si Substrates", Materials Research Society Meeting, Anaheim, CA, April 1987.

  23. K. Nauka, G. A. Reid, S. J. Rosner, S. M. Koch and J. S. Harris, Jr., "Deep Electron Traps in MBE GaAs on Si", Materials Research Society Meeting, Anaheim, CA April 1987.

  24. D. R. Allee, P. R. de la Houssaye, D. G. Schlom, J. S. Harris, Jr., and R. F. W. Pease, "Sub-100nm Gate Length GaAs MESFETs and MODFETs Fabricated by a Combination of MBE and Electron Beam Lithography," 31st International Symposium on Electron, Ion and Photon Beams, Woodland Hills, CA May 1987.

  25. S. M. Koch, S. J. Rosner, R. Hull, and J. S. Harris, Jr., "The Initial Stages of GaAs/Si Growth by MBE, Electronic Materials Conference, June 1987, Santa Barbara, CA.

  26. J. W. Adkisson, T. I. Kamins, S. M. Koch, J. S. Harris, S. J. Rosner, G. A. Reid, "Processing and Characterization of Confined Area GaAs on Silicon," GaAs/Si Workshop, Marina Del Rey, CA, June 1987.

  27. G. W. Yoffe, D. G. Schlom and J. S. Harris, Jr., "MBE Growth of Tunable Multi-Layer Interference Optical Modulators," Device Research Conference, Santa Barbara, CA, June 1987.

  28. Y. C. Pao, J. S. Harris, Jr., L. Parechanian and E. R. Weber, "Material and Device Characterization of (110) GaAs/AlGaAs Grown by MBE," Electronics Material Conference, Santa Barbara, CA, June 1987.

  29. S. M. Koch, S. J. Rosner, R. Hull, and J. S. Harris, Jr., "The Initial Stages of GaAs/Si Growth by MBE", GaAs/Si Workshop, June 1987, Marina del Rey, CA.

  30. S. Y. Chou, E. Wolak, J. S. Harris, Jr. and R. F. W. Pease, "A Lateral Resonant Tunneling FET," - 3rd International Conference on Superlattices, Microstructures, and Microdevices, Chicago, Aug. 1987.

  31. S. Y. Chou, E. Wolak, J. S. Harris, Jr. and R. F. W. Pease, "Resonant Tunneling of Electrons of 1 or 2-Degrees of Freedom," - 3rd International Conference on Superlattices, Microstructures, and Microdevices, Chicago, Aug. 1987.

  32. J. S. Johannessen, J. S. Harris, "The Influence of Substrates on Implanted Layer Characteristics", 14th International Symposium on GaAs and Related Compounds, Sept. 1987, Crete, Greece.

  33. E. S. Hellman, D. G. Schlom, N. Missert, K. Char, J. S. Harris, Jr., M. R. Beasley, A. Kapitulnik, T. H. Geballe, J. N. Eckstein, S. L. Weng and C. Webb, "Molecular Beam Epitaxy and Deposition of High Tc Superconductors," 8th MBE Workshop, Los Angeles, CA, Sept. 1987.

  34. J. Lin, E. C. Larkins, Y. C. Pao, D. Liu, G. W. Yoffe, T. K. Ma and J. S. Harris, Jr., "An Electrical, Optical and Morphological Study of n-AlGaAs (x=0.24) Grown by MBE," 8th MBE Workshop, Los Angeles, CA, Sept. 1987.

  35. J. S. Harris, "Nucleation and Growth of GaAs on Si," AIME TMS Meeting, Cincinnati, Oct. 1987 (Invited).

  36. R. Hull, J. C. Bean, R. Leibenguth, S. M. Koch and J. S. Harris, Jr., "Relationship Between Substrate Cleaning, Surface Structure and Nucleation Phenomena in Heteroepitaxial Growth on Si", extended Abstracts of Electrochemized, Materials Research Society Meeting, Honolulu, Hawaii, Dec. 1987.

  37. K. Yoh and J. S. Harris, Jr., "Complementary MODFET Circuits Consisting of Pseudomorphic N-MODFET and Double Heterojunction P-MODFET", By Selective Molecular Beam Epitaxy, IEDM, Washington, DC, p. 892, Dec. 1987.

  38. S. J. B. Yoo, M. M. Fejer, A. Harwit, R. L. Byer, J. S. Harris, Jr., "MR10 Second Harmonic Generation in dc-bi-ased quantum wells", Annual Meeting, Optical Society of America, 1987.

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  39. R. Hull, J. C. Bean, S. M. Koch and J. S. Harris, Jr., "Heteronucleation and Growth on Si Surfaces by Molecular", TMS/AIMF Symposium, Phoenix, Arizona, Jan. 1988.

  40. Y. C. Pao, D. Liu and J. S. Harris, Jr., "Hydrogen in MBE Grown AlGaAs/GaAs," WOCSEMMAD 1988, Monterey, CA, Feb. 1988.

  41. P. R. de la Houssaye, D. Allee, Y. C. Pao, D. G. Schlom, R. F. W. Pease and J. S. Harris, Jr., "Electron Saturation Velocity Variation in InGaAs and GaAs MODFETs," WOCSEMMAD 1988, Monterey, CA, Feb. 1988.

  42. J. S. Harris, "Integrated Circuits Applications of Resonant Tunneling Structures," American Physical Society Meeting, New Orleans, LA, March 1988 (Invited).

  43. J. N. Eckstein, S. L. Weng, C. Webb, F. Turner, D. G. Schlom, E. S. Hellman, N. Missert, J. S. Harris, Jr., and M. R. Beasley, "In-Situ RHEED Characterization and Molecular Beam Epitaxy of DyB.0a2Cu307-x", American Physical Society Meeting, New Orleans, LA, March 1988.

  44. E. Wolak, K. Lear, P. Pitner, E. S. Hellman, B. G. Park, J. S. Harris, Jr., and D. Thomas, "Elastic Scattering Centers in Resonant Tunneling Diodes," American Physical Society Conference, New Orleans, LA, March 1988.

  45. E. Wolak, K. Lear, P. Pitner, E. S. Hellman, B. G. Park, J. S. Harris, Jr., and D. Thomas, "Elastic Scattering Centers in Resonant Tunneling Diodes," SPIE Conference, Newport Beach, CA, March 1988.

  46. E. S. Hellman, K. Lear and J. S. Harris, Jr., "Limit Cycle Oscillations in Negative Differential Resistance Devices," American Physical Society Meeting, New Orleans, Louisiana, March 1988.

  47. J. W. Adkisson, T. I. Kamins, S. M. Koch, J. S. Harris, Jr., S. J. Rosner, K. Nauka and G. A. Reid, "Growth of GaAs on Si in Masked, Etched Trenches", Proceedings of Spring MRS Meeting, Reno, NV, April 1988, Vol. 116, Heteroepitaxy on Silicon: Fundamentals, Structures and Devices, ed. H. K. Choi, R. Hull, H. Ishiwars and R. J. Nemanich.

  48. D. G. Schlom, J. N. Eckstein, E. S. Hellman, C. Webb, F. Turner, J. S. Harris, Jr., M. R. Beasley and T. H. Geballe, "Molecular Beam Epitaxy of Layered DY-BA-CU-O Compounds," Materials Research Society, Reno, NV, April 1988.

  49. J. S. Harris, "GaAs on Si, The Best of Each or Worst of Both!", Frontiers in Materials Science Seminar Series, State University of New York, April 1988 (Invited).

  50. E. Wolak, K. Shepard, S. Y. Chou and J. S. Harris, Jr., "Elastic Scattering in Resonant Tunneling Devices With One Degree of Freedom," 4th International Conference on Superlattices, Microstructures and Microdevices, Triest, Italy 1988.

  51. D. Liu, T. Zhang, E. C. Larkins, T. T. Chiang, R. A. LaRue, J. S. Harris, Jr., T. Sigmon and W. E. Spicer, "Sodium Sulfide Treated (100) and Misoriented (110) GaAs Surfaces," 1988 International Symposium on Gallium Arsenide and Related Compounds, Atlanta, GA, Sept. 1988.

  52. E. C. Larkins, D. Liu, Y. C. Pao, M. J. Lin, G. W. Yoffe and J. S. Harris, Jr., "Characterization of AlGaAs and GaAs Material and Interfaces Grown on (110) GaAs by MBE,"1988 International Symposium on Gallium Arsenide and Related Compounds, Atlanta, GA, Sept. 1988.

  53. B. Lee, M. H. Kim, S. S. Bose, G. E. Stillman, E. C. Larkins, E. S. Hellman, D. G. Schlom and J. S. Harris, Jr., "Sulfur Incorporation in Undoped High Purity n-Type GaAs Grown by Molecular Beam Epitaxy," 15th International Symposium on Gallium Arsenide and Related Compounds, Atlanta, GA, Sept. 1988.

  54. R. Köhrbrück, S. Munnix, D. Bimberg, E. C. Larkins and J. S. Harris, Jr., "Flux Ratio Dependence of Growth Rate, Interface Quality, and Impurity Incorporation in MBE Grown AlGaAs/GaAs Quantum Wells," 15th International Symposium on Gallium Arsenide and Related Compounds, Atlanta, GA, Sept. 1988.

  55. K. L. Lear, K. Yoh and J. S. Harris, Jr., "Monolithic Integration of GaAs/AlAs Resonant Tunnel Diode Load and GaAs Enhancement-Mode MESFET Drivers for Tunnel Diode FET Logic Gates,"15th International Symposium on Gallium Arsenide and Related Compounds, Atlanta, GA, Sept. 1988.

  56. J. S. Harris, Jr., "MBE Growth of High Temperature Superconductors," 6th International MBE Conference, Sapporo, Japan, Sept. 1988 (Invited).

  57. Y. C. Pao, J. Franklin and J. S. Harris, Jr., "Influence of As4/Ga Flux Ratio on Be Incorporation in Heavily Doped GaAs Grown by Molecular Beam Epitaxy," 6th International MBE Conference, Sapporo, Japan, Sept. 1988.

  58. Y. C. Pao, D. Liu and J. S. Harris, Jr., "Molecular Beam Epitaxy AlGaAs/GaAs Grown in the Presence of Hydrogen," 6th International MBE Conference, Sapporo, Japan, Sept. 1988.

  59. J. S. Harris, Jr., "MBE Growth of High Tc Superconductors: Problems and Future Prospects," Superconductors in Electronics Commercialization Workshop, San Francisco, CA, Sept. 1988 (Invited).

  60. D. G. Schlom, W. S. Lee, T. Ma and J. S. Harris, Jr., "Reduction of Gallium-Related Oval Defects," 9th MBE Workshop, Purdue University, West Lafayette, IN, Sept. 1988.

  61. S. Y. Chou, D. R. Allee, R. F. W. Pease and J. S. Harris, "Lateral Resonant Tunneling FETs" Engineering Foundation Conference on Ultra-High Speed Devices, Kona, Hawaii, Dec. 1988.

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  62. J. S. Harris, "Optoelectronics at Stanford", University of Florida, Gainsville, FL, Feb. 1989 (Invited).

  63. S. K. Diamond, E. Ozbay, M. J. W. Rodwell, D. M. Bloom, Y. C. Pao and J. S. Harris, "Resonant Tunneling Diodes for Switching applications", Picosecond Electronics and Optoelectronics Conference, Salt Lake City, UT, March 1989.

  64. G. N. Nasserbakht, J. W. Adkisson, T. I. Kamins, B. A. Wooley, and J. S. Harris, Jr., "A Monolithically Integrated Fiber-Optic Front-End Receiver in GaAs on Si Technology" Symposium VLSI Circuits Dig. Tech. papers, May 1989.

  65. J. M. Owens, D. J. Halchin, and K. L. Lear, W. S. Lee, and J. S. Harris Jr., "Microwave Characteristics of MBE Grown Resonant Tunneling Devices" 1989 IEEE/MTT-S International Microwave Symposium, Long Beach, CA, June 1989

  66. K. L. Lear, W. S. Lee, and J. S. Harris, Jr., "Experimental Dependence of Resonant Tunnel Diode Current on Accumulation Layer Band Profiles", 47th Annual Device Research Conference, MIT, Cambridge, MA, June 1989.

  67. S. Y. Chou, D. R. Allee, R. F. W. Pease and J. S. Harris, Jr., "Quantum Interference Devices Fabricated Using Molecular Beam Epitaxy and Ultra-High Resolution Electron Beam Lithography," IEEE Device Research Conference, MIT Cambridge, MA June 1989.

  68. S. Y. Chou, D. R. Allee, R. F. Pease and J. S. Harris Jr., "New Lateral Resonant Tunneling FETs Fabricated Using Molecular Beam Epitaxy and Ultra-High Resolution Electron Beam Lithography", 16th International Symposium on GaAs and Related Compounds, Karuizawa, Japan, Sept. 1989.

  69. J. S. Harris, Jr., "MBE Technology and High Speed Electronics", AGARD Workshop, Trondheim, Norway, Sept. 1989 (Invited).

  70. J. S. Harris, Jr., "Growth of High Tc Superconductors by MBE", AGARD Workshop, Trondheim, Norway, Sept. 1989 (Invited).

  71. J. S. Harris, Jr., "Stanford University and the Development of Silicon Valley", Bergen High Technology Center, Bergen, Norway, Sept. 1989 (Invited).

  72. J. S. Harris, Jr., "GaAs - Will It Always be the MATERIAL of the FUTURE?" Sunrise Venture Capital Club, Stanford, Oct. 1989 (Invited).

  73. J. S. Harris, Jr., "Application of Resonant Tunneling Diodes" University of California (San Diego), Sept. 1989. (Invited).

  74. J. S. Harris, Jr., "Multi-Material Electronic Structures", AGED Group B STAR Review, Crystal City, VA, Oct. 1989 (Invited)

  75. J. S. Harris, "From Bloch Function to Quantum Wells" Bloch Symposium, Stanford University, Oct. 1989 (Invited).

  76. D. G. Schlom, J. N. Eckstein, I. Bozovic, A. F. Marxhall, J. T. Sizemore, Z. J. Chen, K. E. von Dessonneck, J. S. Harris, Jr., and J. C. Bravman, "Molecular Beam Epitaxy of Layered Bi-Sr-Ca-Cu-O Compounds", Fall Materials Research Society Symposium M: High-Temperature Superconductors, Boston, MA, Nov. 1989.

  77. B. G. Park, E. Wolak, K. L. Lear, and J. S. Harris, Jr., "Improved Vertically Integrated Resonant Tunneling Diodes," IEEE/IEDM Conference, Washington, D.C. Dec. 1989.

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  78. Y. C. Pao, G. Bechtel, C. Nishimoto, M. Riaziat, R. Majidi-Ahy, J. S. Harris. Jr., "Surface Potential Effect on on InA1As/InGaAs/InP HEMTs Low Conductance Drain (LCD) Design Approach," WOCSEMMAD, San Francisco, CA, Feb. 1990.

  79. D. G. Schlom, J. N. Eckstein, I. Bozovic, Z. J. Chen, A. F. Marshall, K. E. von Dessonneck, J. S. Harris, Jr., "Molecular Beam Epitaxy-a Path to Novel High Tc Superconductors," SPIE Conference: Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, San Diego, CA, March 1990 (Invited).

  80. S. D. Kim, T. Ma, Z. Rek and J. S. Harris, Jr., "Defect Structures in MBE Grown GaAs on Si," SPIE Conference: Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, San Diego, CA, March 1990.

  81. P. Cheng and J. S. Harris, Jr., "Improved Design of AlAs/GaAs Resonant Tunneling Diodes", SPIE Conference: Quantum Well and Superlattice Physics III, San Diego, CA, March 1990.

  82. D. G. Schlom, J. N. Eckstein, K. E. von Dessonneck, Z. J. Chen, I. Bozovic, J. Sizemore, C. Webb, F. Turner, J. S. Harris, Jr., J. C. Bravman, M. R. Beasley, and T. H. Geballe, "Molecular Beam Epitaxy of Layered Bi-Sr-Ca-Cu-O Compounds," Spring Materials Research Society Symposium on High-Temperature Superconductors, San Diego, CA, April 1990.

  83. I. Bozovic, J. N. Eckstein, D. G. Schlom and J. S. Harris, Jr., "In-Situ Growth of Superconducting Single Crystal Bi-Sr-Ca-Cu-O Thin Films by Molecular Beam Epitaxy" Conference on the Science and Technology of Thin-Film Superconductors, Denver, CO, April/May 1990.

  84. J. N. Eckstein, I. Bozovic, K. E. von Dessonneck, D. G. Schlom, and J. S. Harris, Jr., "Atomically Layered Heteroepitaxy of High Temperature Superconducting Thin Films: Metastable Phases and Superlattice Structures", ISTEC Conference, Japan, May 1990 (Invited).

  85. Y. C. Pao, C. Nishimoto, C. Yuen, G. Bechtel, J. S. Harris, Jr., "Low Conductance Drain (LCD) Design Approach on In0.52AI0.48As/In0.53Ga0.47As/Inp HEMTs", Device Research Conference, UCSB, Santa Barbara, CA, June 1990.

  86. J. N. Eckstein and I. Bozovic, D. G. Schlom, Z. J. Chen, and J. S. Harris, "In-Situ Growth of Single Crystal Bi2Sr2CanCun+1Ox Thin Films by Atomically Layered Epitaxy", Electronic Materials Conference, UCSB, Santa Barbara, CA, June 1990.

  87. J. J. L. Rascol, K. P. Martin, R. E. Carnahan, and R. J. Higgins, L. Cury and J. C. Portal, B. G. Park, E. Wolak, K. L. Lear, and J. S. Harris, Jr. "Ballistic Electron Contributions in Vertically Integrated Resonant Tunneling Diodes", NATO Advanced Study Institute on: Granular Nanoelectronics, Il Ciocco, Italy, July 23-Aug. 4, 1990.

  88. J. J. L. Rascol, K. P. Martin, R. E. Carnahan, R. J. Higgins, L. Cury, J. C. Portal, B. G. Park, E. Wolak, K. L. Lear, and J. S. Harris, Jr. "Ballistic Electron Contributions in Vertically Integrated Resonant Tunneling Diodes", 5th Int. Conf. on Superlattices and Microstructures, Berlin, Aug. 1990.

  89. W. S. Lee, G. W. Yoffee, D. G. Schlom and J. S. Harris, Jr., "Accurate Measurement of MBE Temperature", VI International MBE Conference, UCSD, San Diego, CA, Aug. 1990.

  90. Y. C. Pao, J. S. Harris, Jr., "Molecular Beam Epitaxial Growth and Structural Design of In0.52Al0.48As/In0.53Ga0.47As/InP HEMTs", MBE Conference, UCSD, San Diego, CA, Aug. 1990.

  91. J. N. Eckstein, I. Bozovic, D. G. Schlom, and J. S. Harris, Jr., "Growth of Superconducting Bi2Sr2Can-1CunOx Thin Films by Atomically Layered Epitaxy," VI International MBE Conference, UCSD, San Diego, CA, Aug. 1990.

  92. D. Costa, W. Liu, and J. S. Harris, Jr., "A new Direct Method for Determining the Heterojunction Bipolar Transistor Equivalent Circuit Model", IEEE Bipolar Circuits and Technology Meeting, Minneapolis, Sept. 1990.

  93. J. S. Harris, Jr., and M. M. Fejer, "Quantum Wells and Artificially Structured Materials for Non-Linear Optics," SPIE International Conference, Eurogress Aachen, Germany, Oct. 1990 (Invited).

  94. B. Pezeshki, D. Thomas, and J. S. Harris, Jr., "Optimization of Reflection Electro-Absorption Modulators," SPIE International Conference, Eurogress Aachen, Germany, Oct. 1990.

  95. D. G. Schlom, A. F. Marshall, J. S. Harris, Jr., I. Bozovic, J. N. Eckstein, "Growth of Metastable Phases and Superlattice Structures of Bi-Sr-Ca-Cu-O Compounds by an Atomic Layering MBE Technique" 3rd Int'l Symp. on Superconductivity, Sendai, Japan, Nov. 1990 (Invited).

  96. D. G. Schlom, A. F. Marshall, J. S. Harris, Jr., I. Bozovic, J. N. Eckstein, "Growth of Metastable Phases and Superlattice Structures of Bi-Sr-Ca-Cu-O Compounds by an Atomic Layering MBE Technique," Symp. of Superconductivity of the Japan Society of Powder and Powder Metallurgy, Nov. 1990, Kyoto, Japan (Invited).

  97. J. W. Adkisson, J. S. Harris, Jr., T. George, and E. R. Weber, "77K Photoluminescence Investigation of Residual Stress in MBE-Grown GaAs/Si Layers," Fall Materials Research Society Meeting, Boston, MA, Nov. 1990.

  98. W. Liu, D. Hill, D. Costa, and J. S. Harris, Jr., "Comparison of Pnp AlGaAs/GaAs Heterojunction Bipolar Transistor with and Without Base Quasielectric Field" IEEE/IEDM Conference, San Francisco, CA, Dec. 1990.

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  99. J. H. Kim, E. Bozovic, J. S. Harris, Jr., W. Y. Lee, C. B. Eom and T. H. Geballe, "Plasmons in High-Tc Cuprate Superconductors", Workshop on Electronic Structure and Mechanisms for High Temperature Superconductivity, Miami, FL Jan. 1991.

  100. B. Pezeshki, R. Apte, S. M. Lord, and J. S. Harris, "Dynamic Optical Grating for Laser Beam Steering Applications" Quantum Electronics Meeting, Salt Lake City, UT March 1991.

  101. D. Thomas, B. Pezeshki, and J. S. Harris, Jr., "Reflection Electro-Absorbtion Modulator with High Refelectivity Change in a Novel Normally-Off Configuration", Quantum Electronics Meeting, Salt Lake City, UT March 1991.

  102. W. S. Fu, G. E. Poirier, R. P. Bryan, J. F. Klem, G. R. Olbright, A. Paul, R. Binder, S. W. Koch, and J. S. Harris, "Femtosecond Gain Dynamics in Semiconductors", Quantum Optoelectronics Topical Meeting, Salt Lake City, UT, March 1991.

  103. Y. C. Pao and J. S. Harris, Jr., "Physical Origin of the High Output Conductance in In0.52Al0.48As/In0.53Ga0.47As/InP HEMTS", Third International Conference on Indium Phosphide and Related Materials, Cardiff, Wales, UK, April 1991.

  104. J. H. Kim, A. Kapitulnik, J. S. Harris, Jr., K. Char, I Bozovic and W. Y Lee, "Preparation of Optically Smooth Surface of High-Tc Superconducting Films" Materials Research Society Meeting, Anaheim, CA, April/May 1991.

  105. G. R. Olbright, W. S. Fu, G. E. Poirer, R. P. Bryan, J. F. Klem, A. Paul, R. Binder, S. W. Koch, and J. S. Harris, " Femtosecond-gain Spectroscopy of GaAs", Quantum Electronics Laser Science Conference, Baltimore, May 1991.

  106. D. Costa, W. Liu, and J. S. Harris, Jr., "Reduction of Low-Frequency Noise in Npn AlGaAs/GaAs HBTs", Device Research Conference, University of Colorado, Boulder, June 1991.

  107. J. H. Kim, I. Bozovic, J. S. Harris, W. Y. Lee, C. B. Eom, T. H. Geballe and E. S. Hellman, "Plasmons in High-Temperature Superconductors," The International Conference on Materials and Mechanisms of Superconductivity: High Temperature Superconductors III, Kanazawa, Japan, July 1991.

  108. D. Costa and J. S. Harris, "Low-Frequency Noise Characterization of Npn AlGaAs/GaAs Heterojunction Bipolar Transistors", 18th International Symposium on GaAs and Related Compounds, Seattle, WA, Sept. 1991.

  109. B. Pezeshki, S. M. Lord, J. S. Harris, Jr., "Electro-Absorption in InGaAs/AlGaAs Quantum Wells", 18th International Symposium on GaAs and Related Compounds, Seattle, WA, Sept. 1991.

  110. W. S. Fu, J. F. Klem, G. R. Olbright and J. S. Harris, Jr., "Ultrafast Optical Gain Nonlinearities in GaAs/AlAs Type-II Quantum Wells", OSA Annual Meeting, San Jose, CA, Nov. 1991.

  111. G. G. Zhou, A. Fischer-Colbrie, J. Miller, Y. C. Pao, B. Hughes, L. Studebaker and J. S. Harris, "High Output Conductance of InAlAs/InGaAs Channel MODFETS", IEDM/IEEE Conference, Washington, DC, Dec. 1991.

  112. J. H. Kim, I. Bozovic, J. S. Harris, Jr., "C. B. Eom, T. H. Geballe, W. Y. Lee and E. S. Hellman, "A Comparative Study of Complex Dielectric Function of Cuprate and Bismate Superconductors," The MRS 1991 Fall meeting, Boston, MA, Dec. 1991.

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  113. B. Pezeshki, S. M. Lord, T. Boykin and J. S. Harris, Jr., "Visible Wavelength Electro-Absorption Modulators in AlGaAs/AlAs Quantum Wells," DARPA/OMC Review, Palo Alto, CA, Jan. 1992.

  114. W. Fu, G. R. Olbright, R. Binder, A. Paul, S. W. Koch, W. C. Banyai, J. F. Klem, R. P. Bryan and J. S. Harris, Jr., "Ultrafast Optical Gain Nonlinearities in GaAs/AlGaAs Type II Quantum Wells," DARPA/OMC Review, Palo Alto, CA, Jan. 1992.

  115. J. H. Kim, I. Bozovic, J. S. Harris, Jr., C. B. Eom, T. H. Geballe, W. Y. Lee, E. S. Hellman, and J. T. Cheung, "A Comparative Optical Study of Oxide Metals and Superconductors," American Physical Society 1992 meeting, Indianapolis, IN, March 1992.

  116. D. Oberman and J. S. Harris, "Frequency Doubling in Asymmetric Quantum Wells," Workshop on Wide Bandgap Nitrides", St. Louis, MO. April 1992.

  117. S. M. Lord, G. Roos, B. Pezeshki and J. S. Harris, Jr., "Hydrogen Passivation of Defects in InGaAs/AlxGa1-xAs Quantum Wells," MRS Spring Meeting 1992, San Francisco, April/May 1992.

  118. B. Pezeshki and J. S. Harris, Jr., "Quantum Well Surface-Normal Phase Modulator for Beam Steerings," Optical Society of America CLEO/QELS, Anaheim, CA, May 1992.

  119. S. Fu, J. F. Klem, G. R. Olbright and J. S. Harris, Jr., "Ultrafast Optical-Gain Dynamics in GaAs/AlAs Type-II Quantum Wells," Optical Society of America CLEO/QELS, Anaheim, CA, May 1992.

  120. B. Pezeshki, S. M. Lord and J. S. Harris, Jr., "GaAs/AlAs Quantum Wells for Electro-Absorption Modulators," DRC, MIT Cambridge, MA, June 1992.

  121. S. M. Lord, B. Pezeshki, S. D. Kim and J. S. Harris, Jr., "1.3 mm Exciton Resonances in InGaAs Quantum Wells Grown by Molecular Beam Epitaxy Using a Slowly Graded Buffer Layer," Seventh International Conference on Molecular Beam Epitaxy, Schwabish Gmund, Germany, Aug. 1992.

  122. S. L. Lord, B. Pezeshki, and J. S. Harris, Jr., "Multiple Quantum Well Electroabsorption Modulator Near 1.3 mm in InGaAs/GaAs," OSA Annual meeting, Albuquerque, NM, Sept. 1992.

  123. S. M. Lord, B. Pezeshki, A. F. Marshall, J. S. Harris, Jr., R. Fernandez and A. Harwit, "Graded Buffer Layers for Molecular Beam Epitaxial Growth of High in Content InGaAs on GaAs for Optoelectronics," Fall 1992 MRS Meeting, Boston, MA, Nov. 1992.

  124. M. Weckwerth and J. S. Harris, Jr., "Resonant Tunneling Metal Base Hot Electron Transistor", Advanced Heterostructure Transistor, Kona, Hawaii, Nov. 1992.

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  125. J. A. Trezza, M. C. Larson, S. M. Lord and J. S. Harris, Jr., "Three-Step, Asymmetric Quantummetric Quantum Wells for High Performance Optical Modulator Applications," presented at DARPA Optoelectronics Materials Center Review, Pasadena, CA, Jan. 1993.

  126. K. Bacher, B. Pezeshki and J. S. Harris, Jr., "In-Situ Correction to Vertical Cavity Optical Devices Grown by Molecular Beam Epitaxy," presented at DARPA Optoelectronics Materials Center Review, Pasadena, CA, Jan. 1993.

  127. K. Bacher, R. Lodenkamper, J. P. A. van der Wagt, D. Kirillov and J. S. Harris, Jr., "Measurements for Improved Control of Molecular Beam Epitaxy", Santa Fe, NM, Jan. 1993.

  128. J. S. Harris, Jr., "Heterojunction Devices for MM Wave Applications," Presented at Santa Clara IEEE MTT Section, Feb. 1993.

  129. J. A. Trezza, M. C. Larson, S. M. Lord and J. S. Harris, Jr., "Large, Low-Voltage Absorption Changes and Absorption Bistability in Novel, Three-Step Asymmetric QWs", presented at OSA Quantum Optoelectronics Meeting, Palm Springs, CA, March 1993.

  130. J. A. Trezza, B. Pezeshki, M. C. Larson, S. M. Lord and J. S. Harris, Jr., "High Contrast Reflection Electro-Absorption Modulator with Zero Phase Change", presented at OSA Quantum Optoelectronics Meeting, Palm Springs, CA, March 1993.

  131. H. C. Chui, S. M. Lord, M. M. Fejer and J. S. Harris, Jr., "Intersubband Transitions in High Indium Content InGaAs/AlGaAs QWs Grown on GaAs with a Graded InGaAs Buffer", presented at OSA Quantum Optoelectronics Meeting, Palm Springs, CA, March 1993.

  132. D. Liu, S. M. Lord, M. Larson, J. A. Trezza and J. S. Harris, "Phase Characteristics of Reflection Electro-Absorption Modulators", presented at OSA Spatial Light Modulators, Palm Springs, CA, March 1993.

  133. B. Pezeshki, J. A. Kash, D. Liu, S. M. Lord and J. S. Harris, Jr., "Visible Wavelength LEDs and Reflections Modulators with AlGaAs/AlAs Quantum Wells," presented at OSA Quantum Optoelectronics Meeting, Palm Springs, CA, March 1993.

  134. J. A. Trezza, J. S. Harris, Jr., "Three-Step Asymmetric Coupled Quantum Wells for Efficient Optical Modulation," presented at workshop on Low Dimensional Structures, Salt Lake City, Utah, April 1993.

  135. R. Lodenkamper, M. L. Bortz, K. Bacher, M. M. Fejer and J. S. Harris, Jr., "Surface Emitting Second Harmonic Generation in a Vertical Resonator", presented at CLEOs Technical Conference, Baltimore, MD, May 1993.

  136. S. M. Lord, J. Trezza, M. Larson, B. Pezeshki and J. S. Harris, Jr., "Electroabsorption Reflection Modulators Operating near 1.3 Micron on GaAs," presented at CLEOs Technical Conference, Baltimore, MD, May 1993.

  137. J. S. Harris, "In-situ Film Thickness and Temperature Measurements in MBE by Transmission Spectroscopy," In-Situ Film Thickness and Temperature Measurement Systems for Semiconductor Manufacturing, Erlangen, Germany, June 1993 (Invited).

  138. S. M. Lord, A. F. Marshall and J. S. Harris, Jr., "Molecular Beam Epitaxy of High Mismatched InGaAs on GaAs Using Graded Buffer Layers," presented at DRC/EMC Conference, Santa Barbara, CA, June 1993.

  139. J. A. Trezza and J. S. Harris, Jr., "Coupled Quantum Wells for Optical Modulation," presented at NATO conference on Confined Electrons and Photons, Palermo, Italy, July 1993.

  140. H. C. Chui, E. L. Martinet, M. M. Fejer and J. S. Harris, Jr., "Large Energy Intersubband Transitions in High Indium Content InGaAs/AlGaAs Quantum Wells," presented at NATO Advanced Research Workshop on Intersubband Transition Physics and Devices, Whistler, B.C., Sept. 1993 (Invited).

  141. E. L. Martinet, B. Vartanian, G. L. Woods, H. C. Chui, J. S. Harris, Jr., M. M. Fejer, B. A. Richman and C. A. Rella "Applications of High Indium Content InGaAs/AlGaAs Quantum Wells in the 2-7um Regime," presented at NATO Advanced Research Workshop on Intersubband Transition Physics and Devices, Whistler, B.C., Sept. 1993 (Invited).

  142. G. S. Solomon, H. Chui, D. Kirillov and J. S. Harris, Jr., "The Determination of AiAs Mole Fraction in AlxGa1-xAs Using Raman Spectroscopy and X-Ray Diffraction," presented at MBE conference, Stanford, CA, Sept. 1993.

  143. J. A. Trezza, B. Pezeshki, M. C. Larson, S. M. Lord, J. S. Harris, Jr., "Eliminating Parasitic Phase Shift in Optical Modulators" presented at Conference on Lasers and Electro-Optics (CLEO), Baltimore, MD, 1993.

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  144. E. L. Martinet, G. L. Woods, H. C. Chui, J. S. Harris, Jr., and M. M. Fejer, "Free-electron Laser Nonlinear Spectroscopy of Doubly Resonant (5.5-3.0 mm and 4.1-2.1 mm) InGaAs/AlGaAs Asymmetric Quantum Wells," presented at SPIE OE/Laser Symposium, Los Angeles, Jan. 1994.

  145. B. J. Vartanian and J. S. Harris, Jr. "Normal Incidence Intersubband Hole Absorption in In0.5Gao0.5As/Al0.45Gao0.55As Quantum Wells," presented at SPIE OE/Laser Symposium, Los Angeles, Jan. 1994.

  146. C. H. Dai, W. Liu, A. Massengale and J. S. Harris, Jr., "Heterojunction Bipolar Transistors with Ultra-Short Passivation Ledges," presented at Workshop on Compound Semiconductor Materials and Devices in San Francisco, Feb. 1994.

  147. J. S. Harris, Jr., "Recent Developments in MBE Growth of GaN" presented at Sandia Lab., March 1994 (Invited).

  148. J. S. Harris, Jr., "Recent Developments in MBE Growth of GaN" presented at Ecole Phlytechnique Federale de Lausanne, April 1994 (Invited).

  149. J. S. Harris, Jr., "Recent Developments in MBE Growth of GaN" presented at Stanford Materials Science Colloquicem, May 1994 (Invited).

  150. J. A. Trezza, J. S. Harris, Jr., "Development and Analysis of Vertical Cavity Phase Flip Modulators," presented at CLEO (Conference on Lasers and Optoelectronics), Anaheim, CA, May 9 - 13, 1994.

  151. D. Liu, M. C. Larson, J. S. Harris, Jr., "Short Cavity Fabry-Perot Modulator," presented at CLEO (Conference on Lasers and Optoelectronics), Anaheim, CA, May 1994.

  152. B. J. Vartanian and J. S. Harris, Jr., "Normal Incidence Absorption in P-type In0.5Ga0.5As/Al0.45Ga0.55As Quantum Wells," presented at IQEC '94, Anaheim, CA, May 1994.

  153. D. Miller, J. S. Harris, Jr., "50 nm Quantum Wire Structures Grown on Corrugated GaAs," presented at 185th Electrochemical Society Meeting, San Francisco, CA, May 1994.

  154. D. Oberman, H. Lee, W. K. Götz, J. S. Harris, Jr., "Novel Approaches to MBE Growth of III-V Nitride Semiconductors," presented at the 185th Electrochemical Society Meeting, San Francisco, CA, May 1994.

  155. J. S. Harris, Jr., "New Challenges in Compound Semiconductor Technology," presented at the 185 the Electrochemical Society Meeting, San Francisco, CA, May 1994 (Invited).

  156. D. J. Bone, H. Lee, K. Williams, J. S. Harris, Jr., and R. F. W. Pease, "Characterization of Samples Regrown by Molecular Beam Epitaxy Following In Situ Bombardment with Variable-Energy Focused Ion Beams," presented at the ECS meeting, San Francisco, June, 1994.

  157. D. Oberman, H. Lee, W. K. Götz, J. S. Harris, Jr., "MBE Growth of GaN with ECR Plasma and Hydrogen Azide," presented at the 1994 Electronic Materials Conference, Boulder, CO, June 1994.

  158. C. Dai, W. Liu, A. Massengale, A. Kameyama, J. S. Harris, Jr., "Novel Processing Approach for Sub-Micron Heterojunction Bipolar Transistors," presented at Device Research Conference (52nd), Boulder, Colorado, June 1994.

  159. J. A. Trezza, J. S. Harris, Jr., "Vertical Cavity Phase Flip Modulators and Reflection-Transmission Amplitude Modulators for Efficient Beam Steering and Optical Switching," presented at IEEE 52nd Annual Device Research Conference, Univ. of Colorado, June 1994.

  160. M. Larson, J. S. Harris, Jr., "Deformable-Membrane Tunable Vertical Cavity Optoelectronics," presented at New Focus, July 1994.

  161. J. S. Harris, Jr., "Recent Developments in MBE Growth of GaN" presented at HP Lab., July 1994 (Invited).

  162. J. S. Harris, Jr., "Recent Developments in MBE Growth of GaN" Presented at Rockwell, July 1994 (Invited).

  163. J. S. Harris, Jr., "Recent Developments in MBE Growth of GaN" Presented at Lajolla ARPA Review, July 1994 (Invited).

  164. J. A. Trezza, J. S. Harris, Jr., "Efficient Quantum Well Optoelectronic Modulators," presented at Naval Research Laboratory, Washington, DC, July 1994.

  165. B. Vartanian, J. S. Harris, Jr., "Normal Incidence Absorption in P-type InGaAs/AlGaAs Quantum Wells," presented at Electrotechnical Laboratory, Tsukuba, Japan, Aug. 1994.

  166. B. Vartanian, J. S. Harris, Jr., "Normal Incidence Absorption in P-type InGaAs/AlGaAs Quantum Wells," presented at Tokyo University, Japan, Aug. 1994.

  167. B. Vartanian, J. S. Harris, Jr., "Normal Incidence Absorption in P-type InGaAs/AlGaAs Quantum Wells," presented at Toshiba, Kawasaki, Japan, Aug. 1994.

  168. J. S. Harris, Jr., "Recent Developments in MBE Growth of GaN" presented at NTT in Japan, Aug. 1994 (Invited).

  169. J. S. Harris, Jr., "Development of Sub-micron Emitter AlGaAs/GaAs Heterojunction Bipolar Transistors for High Frequency and Low Power Applications," presented at NTT in Japan, Aug. 1994 (Invited).

  170. J. S. Harris, Jr., "Development of Sub-micron Emitter AlGaAs/GaAs Heterojunction Bipolar Transistors for High Frequency and Low Power Applications," presented at Fujitsu in Japan, Aug. 1994 (Invited).

  171. J. S. Harris, Jr., "Recent Developments in MBE Growth of GaN," presented at Toshiba in Japan, Aug. 1994 (Invited).

  172. J. S. Harris, Jr., "Development of Sub-micron Emitter AlGaAs/GaAs Heterojunction Bipolar Transistors for High Frequency and Low Power Applications," presented at Toshiba in Japan, Aug. 1994 (Invited).

  173. J. S. Harris, Jr., "Recent Developments in MBE Growth of GaN," presented at NEC in Japan, Aug. 1994 (Invited).

  174. J. S. Harris, Jr., "Development of Sub-micron Emitter AlGaAs/GaAs Heterojunction Bipolar Transistors for High Frequency and Low Power Applications," presented at NEC in Japan, Aug. 1994 (Invited).

  175. J. S. Harris, Jr., "Recent Developments in MBE Growth of GaN," presented at Nichia in Japan, Aug. 1994 (Invited).

  176. H. C. Chui, G. L. Woods, E. L. Martinet, M. M. Fejer, J. S. Harris, Jr., "Mid-Infrared Light Generation in High Indium Content InGaAs/ALGaAs Quantum Wells," presented at 1st International Free Electron User's Workshop, Stanford, Aug. 1994.

  177. G. L. Woods, E. L. Martinet, H. C. Chui, M. M. Fejer, J. S. Harris, Jr., "CO2 and Free Electron Laser Mid-Infrared Nonlinear Spectroscopy of Doubly Resonant InGaAs/AIGaAs Quantum Wells," presented at 1st International Free Electron User's Workshop, Stanford, Aug. 1994.

  178. Z. Yu, J. S. Harris, Jr., "Numerical Analysis of Single and Double-doped InP-based Meterojunction FET Characteristics," presented at Japan Society of Applied Physics.

  179. J. S. Harris, Jr., "Development of Sub-micron Emitter AlGaAs/GaAs Heterojunction Bipolar Transistors for High Frequency and Low Power Applications," presented at Mitsubishi in Japan, Aug. 1994 (Invited).

  180. J. S. Harris, Jr., "Application of Deep Quantum Well Structures to DFG of Mid IR Lasers," presented at Matsushita Electric in Japan, Sept. 2, 1994 (Invited).

  181. D. B. Oberman, H. Lee, W. K. Götz, J. S. Harris, Jr., "Molecular Beam Epitaxy of GaN by Electron Cyclotron Resonance Plasma and Hydrogen Azide," presented at the 8th International Conference on Molecular Beam Epitaxy, Osaka, Japan, Aug. 29 - Sept., 1994.

  182. D. B. Oberman, H. Lee, W. K. Götz, G. S. Solomon, J. S. Harris, Jr., "ECR and Gas Source MBE Growth of Gallium Nitride," presented at International MBE meeting in Japan, Osaka, Aug. 29 - Sept. 2, 1994.

  183. J. S. Harris, Jr., "Recent Developments in MBE Growth of GaN," presented at Matsushita Electric in Japan, Sept. 1994 (Invited).

  184. J. S. Harris, Jr., "Application of Deep Quantum Well Structures to DFG of Mid IR Lasers," presented at Electrotechnical Laboratory in Japan, Sept. 1994 (Invited).

  185. J. S. Harris, Jr., "Recent Developments in MBE Growth of GaN," presented at Electrotechnical Laboratory in Japan, Sept. 1994 (Invited).

  186. J. S. Harris, Jr., "Recent Developments in MBE Growth of GaN," presented at Optoelectronics Technology Lab in Japan, Sept. 1994 (Invited).

  187. J. S. Harris, Jr., "Application of Deep Quantum Well Structures to DFG of Mid IR Lasers," presented at Yokogawa Electric in Japan, Sept. 1994 (Invited).

  188. J. S. Harris, Jr., "Development of Sub-micron Emitter AlGaAs/GaAs Heterojunction Bipolar Transistors for High Frequency and Low Power Applications," presented at Yokogawa Electric in Japan, Sept. 1994 (Invited).

  189. J. S. Harris, Jr., "Recent Developments in MBE Growth of GaN," presented at Sony in Japan, Sept. 1994 (Invited).

  190. J. S. Harris, Jr., "Development of Sub-micron Emitter AlGaAs/GaAs Heterojunction Bipolar Transistors for High Frequency and Low Power Applications," presented at Sony in Japan, Sept. 1994 (Invited).

  191. D. J. Bone, H. Lee, K. Williams, J. S. Harris, Jr., and R. F. W. Pease "Characterization of In-Situ Variable-Energy Focused Ion Beam/MBE MQW Structures," presented at 21th International Symposium on compound Semiconductors, San Diego, CA, Sept. 1994

  192. D. B. Oberman, H. Lee, W. K. Götz, J. S. Harris, Jr., "MBE Growth of GaN with ECR Plasma and Hydrogen Azide" presented at 21st International Symposium on Compound Semiconductors," San Diego, CA, Sept. 1994.

  193. H. Lee, D. B. Oberman, W. Götz and J. S. Harris, Jr., "Heteroepitaxial Growth of GaN on GaAs by ECR Plasma Assisted MBE," presented at 21st International Symposium on Compound Semiconductors, San Diego, CA, Sept. 1994.

  194. J. S. Harris, Jr., "Compositionally Graded Structures and Their Application to Optical Devices," presented at International Workshop on Metastable and Strained Semiconductor Structures in Tsukuba, Japan, Sept. 1994 (Invited).

  195. H. C. Chui, G. L. Woods, M. M. Fejer, E. L. Martinet, J. S. Harris, Jr., "Tunable Mid-Infrared Generation by Mixing of Near-Infrared wavelengths in Intersubband Quantum Wells," present at Annual Meeting of the Lasers and Electro-Optics Society (LEOS), Boston MA, Oct. 1994.

  196. D. B. Oberman, J. S. Harris, Jr., "MBE Growth of GaN with ECR Plasma and Hydrogen Azide," presented at North American Conference on Molecular Beam Epitaxy, Champaign-Urbana, IL, Oct. 1994.

  197. J. S. Harris, Jr., "Application of Deep Quantum Well Structures to DFG of Mid IR Lasers," presented at University of Tokyo in Japan, Oct. 1994 (Invited).

  198. J. S. Harris, Jr., "Recent Developments in MBE Growth of GaN," Presented at University of Tokyo in Japan, Oct. 1994 (Invited).

  199. B. Vartanian, J. S. Harris, Jr., "Valence Band Transitions Near 2.5mm for Normal Incidence Nonlinear Frequency Conversion" presented at Annual Meeting of the Lasers and Electro-Optics Society (LEOS), Boston, MA, Oct. 1994.

  200. W. Götz, D. B. Oberman, J. S. Harris, Jr., "Defect Studies in n-type GaN," presented at Second Workshop on Wide Bandgap Nitrides, St. Louis, MO, Oct. 1994.

  201. D. B. Oberman, H. Lee, W. K. Götz, and J. S. Harris, Jr., "MBE Growth of GaN with ECR Plasma and Hydrogen Azide," presented at Second Workshop on Wide Bandgap Nitrides, St. Louis, MO, Oct. 1994

  202. M. Larson, J. S. Harris, Jr., "Wavelength-tunable Vertical-cavity Optoelectronic Devices in GaAs with Micromachined Deformable-membrane Mirrors," presented at AIST/NSF Nanotechnology Workshop, Electrotechnical Laboratory, Tsukuba, Japan, Oct. 1994.

  203. J. S. Harris, Jr., "Recent Developments in MBE Growth of GaN," Presented at University of New Mexico, Oct. 1994 (Invited).

  204. J. S. Harris, Jr., "New Challenges in Compound Semiconductor Technology," Presented at Northern California Crystal Growers, Oct. 1994 (Invited).

  205. J. S. Harris, Jr., "Recent Developments in MBE Growth of GaN," Presented at Xerox, Oct. 1994 (Invited).

  206. J. S. Harris, Jr., "Recent Developments in MBE Growth of GaN," Presented at Lawrence Livermore National Lab, Nov. 1994 (Invited).

  207. J. A. Trzza, J. S. Harris, Jr., "X-Modulators for Optical Routing," presented at Optivision, Nov. 1994 (Invited).

  208. J. S. Powell, J. S. Harris, Jr., "Application of X-Modulators," Presented at Optivision, Nov. 1994 (Invited).

  209. C. H. Dai, A. R. Massengale, T. S. Low, and J. S. Harris, Jr., "Four Processing Approaches to Form Sub-micron Passivation Ledges on AlGaAs/GaAs Hetero-junction Bipolar Transistors," present at 1995 U. S. Conference on Gallium-Arsenide Manufacturing Technology, New Orleans, LA.

  210. C. Duruöz and J. S. Harris, "Coulomb Blockade in Large Quantum Dot Arrays," presented at Advanced Heterostructure Transistor Conference, Kona, Hawaii, Dec. 1994.

  211. G. S. Solomon, J. A. Trezza and J. S. Harris, Jr., "Growth and Properties of Self Assembled InAs on GaAs Quantum Dots," presented at Advanced Heterostructure Transistor Conference, Kona, Hawaii, Dec. 1994.

  212. J. P. A. Van der Wagt, K. Bacher and J. S. Harris, Jr., "In-situ Real-time Monitoring of MBE Growth," presented at Advanced Heterostructure Transistor Conference, Kona, Hawaii, Dec. 1994.

  213. C. H. Dai, J. S. Harris, Jr., "Developments in the Design and Fabrication of Sub-micron Npn AlGaAs/GaAs Heterojunction Bipolar Transistors," Presented at Department of Technology CAD Intel Corporation, Santa Clara, CA, Dec. 1994.

  214. K. Youden, S. Schwyn-Thony, L. Hesselink and J. S. Harris, Jr., "Pulsed Laser Deposition of Epitaxial Sr0.61Ba0.39Nb2O6 Thin Films for Waveguide Applications," Materials Research Society Meeting, Boston, MA, Dec. 1994.

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  215. M. Weckwerth, and J. S. Harris, Jr., "A Well behaviored Metal/Semiconductor Material System and Its Patantum," presented at AT & T Bell Lab, Jan. 1995.

  216. G. Y. Ding, M. Larson, J. S. Harris, Jr., "Optimization of Vertical Cavity Surface Emitting Lasers," Presented at Hewlett-packard Lightwave Division, Santa Rosa, Feb. 1995.

  217. M. Larson, J. S. Harris, Jr., "Deformable-Membrane Tunable Vertical Cavity Optoelectronics," presented at Hewlett-Packard Lightwave division, Santa Rosa, CA, Feb. 1995.

  218. J. S. Harris, Jr., "Recent Developments in MBE Growth of GaN" presented at IBM Watson Research Center, Feb. 1995 (Invited).

  219. M. C. Larson and J. S. Harris, Jr., "Vertical Coupled-cavity Tunable Filter on GaAs with Deformable-membrane Top Mirror," presented at Integrated Photonics Research conference, Dana Point, CA, Feb. 1995.

  220. G. S. Solomon, C. I. Duruöz, J. A. Trezza, R. M. Clarke, C. M. Marcus and J. S. Harris, Jr., "Growth Induced VS. Patterned O-Dimensional Quantum Structures," NATO Workshop on Growth Induced Quantum Structures, Munich, Germany, Feb. 1995, (Invited).

  221. M. C. Larson and J. S. Harris, Jr., "Broadly-Tunable Microcavity Light Emission," presented at the Quantum Optoelectronics Conference, Dana Point, CA, March 15 - 17, 1995.

  222. J. Trezza, J. S. Powell, M. Morf and J. S. Harris, Jr., "Vertical Cavity X-Modulators," presented at OSA Photonics in Switching Conference, Salt Lake City, Utah, March 12 - 17, 1995.

  223. T. F. Huang, K. E. Youden, S. Schwyn Thony, L. Hesselink, and J. S. Harris, Jr., " " presented at 1995 MRS Spring Meeting, San Francisco, CA, April 1995

  224. M. C. Larson and J. S. Harris, Jr., "Broadly-tunable Resonant-cavity Light-emitting Diode," Conference on Lasers and Electro-Optics (CLEO), Baltimore, MD, May 1995.

  225. M. C. Larson and J. S. Harris, Jr., "Narrow Linewidth, Broadly-Tunable Resonant Cavity Light Emitters," Device Research Conference, Charlottesville, VA, June 1995.

  226. G. S. Solomon, J. A. Trezza, A. F. Marshall and J. S. Harris, Jr., "Monolayer Coverage, Substrate Temperature and Flux-rate Effects on InAs Island Formation on GaAs," Electronic Materials Conference, Charlottesville, VA, June, 1995.

  227. M. C. Larson and J. S. Harris, Jr., "Broadly-tunable Microcavity Light Emission Using a Deformable-membrane Top Mirror," Pacific Rim Conference on Lasers and Electro-Optics (CLEO/Pacific-Rim), Chiba, Japan, July 1995.

  228. M. C. Larson and J. S. Harris, Jr., "Microelectromechanical Wavelength Tuning in Vertical Cavity Light Emitters," NTT Electronics Laboratory, Atsugi, Japan, July 1995.

  229. M. C. Larson and J. S. Harris, Jr., "Microelectromechanical Wavelength Tuning in Vertical Cavity Light Emitters," NEC Kansai Electronics Laboratory, Ohtsu, Japan, July 1995.

  230. M. C. Larson and J. S. Harris, Jr., "Micromechanical Wavelength-Tunable Vertical-cavity Optoelectronics on GaAs," 1995 OSA Annual Meeting, Portland, OR, Sept. 1995.

  231. G. Ding and J. S. Harris, Jr., "Influence of Number of Quantum Wells on Vertical Cavity Surface Emitting Laser Performance," 1995 OSA Annual Meeting, Portland, OR, Sept. 1995.

  232. G. S. Solomon, J. A. Trezza, A. F. Marshall and J. S. Harris, Jr., "Vertically Aligned and Electronically Coupled InAs Islands in GaAs," 15th North American MBE Conference, College Park, MP, Sept. 1995.

  233. D. B. Oberman, H. Lee, E. Tuncel, T. Ueda and J. S. Harris, Jr., "Gas Source MBE of III-II Nitrides Using Dimethylhydrazine," 15th North American Conference on MBE Conference, College Park, MD, Sept. 1995.

  234. B. Paldus, R. W. Zare and J. S. Harris, Jr., "Cavity-Ring Down Spectroscopy, Far-infrared Light Generation and Pretion Detection," Biorad, Hercules, CA, Sept. 1995.

  235. B. Sung, H. C. Chui, E. L. Martinet and J. S. Harris, Jr., "Intersubband Transitions to the Above-barrier States Controlled by Electron Bragg Mirrors," 22nd International Symposium on Compound Semiconductors, Cheju Island, Korea, Sept. 1995.

  236. B. Sung, H. C. Chui, E. L. Martinet and J. S. Harris, Jr., "Intersubband Transitions to the Above-barrier States Controlled by Electron Bragg Mirrors," CNOM Annual Meeting, Stanford, CA, Sept. 1995.

  237. M. C. Larson and J. S. Harris, Jr., "Vertical-Cavity Surface-Emitting Laser with a 15 nm Continuous Wavelength Tuning Range Using a Deformable Membrane Mirror," International Symposium on Signals, Systems and Electronics, San Francisco, CA, Oct. 1995.

  238. G. Ding and J. S. Harris, Jr. "Influence of Number of Quantum Well on Vertical Cavity Surface Emitting Lasers Performance," Solid State Affiliates Meeting, Stanford, CA, Nov. 1995.

  239. M. C. Larson and J. S. Harris, Jr., "Micro-electromechanical Wavelength Tuning in Vertical Cavity Light Emitters and Lasers," Solid State Affiliates Meeting, Stanford, CA, Nov. 1995.

  240. C. Y. Hung, M. V. Weckwerth, M. R. Visokay, Y. C. Pao and J. S. Harris, Jr., "Growth of GaAs and InAlAs on High Quality, Epitaxial NiAl Metal Film," 1995 MRS Fall Meeting, Boston, MA, Dec. 1995.

  241. J. S. Yeo, K. E. Youden, T. F. Huang, L. Hesselink, and J. S. Harris, Jr. "" 1995 MRS Fall Meeting, Boston, MA, Dec. 1995.

  242. Y. Okada, J. S. Harris, Jr., A. Sutoh and M. Kawabe, "GaAs-on-Ge Heteroepitaxy by Atomic Hydrogen-Assisted Molecular Beam Epitaxy," MRS 1995 Fall Meeting, Boston, MA, Dec. 1995.

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  243. H. Lee, M. Yuri, T. Ueda and J. S. Harris, Jr., "Thermodynamic Analysis and Growth Characterization of Thick GaN Films Grown by Chloride VPE Using GaCl3/N2 and NH3/N2," MRS Spring Meeting, San Francisco, CA, April 1996.

  244. T. Ueda, M. Yuri, H. Lee, J. S. Harris, Jr. and T. Baba, "Photoluminescence Study of Chloride Vpe-Grown Gan," MRS Spring Meeting, San Francisco, CA, April 1996.

  245. M. Yuri, T. Ueda, H. Lee, K. Itoh, T. Baba and J. S. Harris, Jr., "Vapor Phase Epitaxy of GaN Using Gallium Tri-Chloride and Ammonia," MRS Spring Meeting, San Francisco, CA, April 1996.

  246. M. A. Cappelli, A. E. Kull, K. Schwendner, H. Lee, S. J. Harris, Jr. and J. Mroczkowski, "GaN Film Growth by a Supersonic Arcjet Plasma," MRS Spring Meeting, San Francisco, CA, April 1996.

  247. E. Tuncel, D. B. Oberman, H. Lee, T. Ueda and J. S. Harris, Jr., "Optical Properties and Morphology of GaN Grown by MBE on Sapphire Substrates," MRS Spring Meeting, San Francisco, CA, April 1996.

  248. T. F. Huang, E. Tuncel, J. S. Yeo and J. S. Harris, Jr., "Growth of Epitaxial GaN Films Using ZnO Buffer Layer by Pulsed Laser Deposition," MRS Spring Meeting, San Francisco, CA, April 1996.

  249. Y. Okada, J. S. Harris, Jr., A. Sutoh and M. Kawabe, "GaAs/Ge Heteroepitaxy by Atomic H-Assisted MBE for Solar Cell Fabrication," 25th IEEE Photovoltaic Specialists Conference, Washington, DC, May 1996.

  250. A. R. Massengale, M. C. Larson, C. Dai and J. S. Harris, Jr., "Collector-up AlGaAs/GaAs HBTs Using Oxidized AlAs," 54th Annual Device Research Conference, Santa Barbara, CA, June 1996.

  251. M. C. Larson, A. R. Massengale and J. S. Harris, Jr., "Microelectromechanical Wavelength-Tunable Vertical Cavity Laser," 54th Annual Device Research Conference, Santa Barbara, CA, June 1996.

  252. H. Lee, D. B. Oberman and J. S. Harris Jr., "Reactive Ion Etching of Gallium Nitride Films," 38th Annual Electric Materials Conference, Santa Barbara, CA, June 1996.

  253. G. S. Solomon, S. Komarov and J. S. Harris, Jr., "Effects of Substrate Growth Temperature on Photoluminescence Linewidth and Intensity in Self-Organized InAs Quantum Dots on GaAs," 38th Annual Electronic Materials Conference, Santa Barbara, CA, June 1996.

  254. Y. Okaka, J. S. Harris, Jr., and W. Gvtz, "Deep Level Defects in GaAs/Si Grown by Low Temperature Atomic H-assisted MBE," 1996 Electronic Materials Conference, Santa Barbara, CA, June 1996.

  255. J. S. Harris, Jr., "Design of Quantum Well Intersubband Transitions for Non-linear Difference Frequency Mixing," OSA Topical Meeting, Maui, HI, July 1996. (Invited)

  256. G. S. Solomon, Y. Yamamoto and J. S. Harris, Jr., "Vertical Coupling and Lateral Transport in Growth Induced InAs Quantum Dot," 9th International Conference of Molecular Beam Epitaxy, Malibu, CA, Aug. 1996.

  257. Y. Okada, J. S. Harris, Jr., and M. Kawabe, "Growth of Abrupt GaAs/Ge Interfaces by Atomic Hydrogen-Assisted MBE," 9th International Conference on Molecular Beam Epitaxy, Malibu, CA, Aug. 1996.

  258. J. S. Harris, Jr., M. C. Larson and A. R. Massengale, "Broad Range Continuous Wavelength Tuning in Microelectromechanical Vertical Cavity Surface Emitting Lasers," LEOS Workshop on Optical MEMS, Keystone, CO, Aug. 1996. (Invited)

  259. F. Sugihwo, M. C. Larson and J. S. Harris, Jr., "Widely Tunable Vertical-Cavity Surface-Emitting Lasers," Optical Society of America Annual Meeting, Rochester, NY, Oct. 1996.

  260. G. Y. Ding and J. S. Harris, Jr., "Dynamic Behavior of VCSELs under High Speed Modulation," Optical Society of America Annul Meeting, Rochester, NY, Oct. 1996.

  261. J. Powell and J. S. Harris, Jr., "Vertical Cavity X-Modulators for Reconfigurable Optical Interconnection and Routing," IEEE Conference on Massively Parallel Projects Using Optical Interconnections, Maui, HI, Oct. 1996.

  262. J. S. Harris, Jr., "Vertically Aligned and Electronically Coupled Growth Induced InAs Quantum Dot Layers on GaAs," International Symposium on Formation, Physics and Device Applications of Quantum Dot Structures, Sapporo, Japan, Nov. 1996. (Invited)

  263. J. S. Harris, Jr., "Single Electron Devices," Hokkaido University, Sapporo, Japan, Nov. 1996. (Invited)

  264. F. Sugihwo, M. C. Larson, A. R. Massengale and J. S. Harris, Jr., "Micromachined Tunable Vertical-Cavity Surface-Emitting Lasers," IEDM, San Francisco, CA, Dec. 1996.

  265. J. S. Harris, Jr., "Nanostructures and Single Electron Transistors," National Taiwan University, Taipei, Taiwan, Dec. 1996 (Invited)

  266. J. S. Harris, Jr., "Application of Micro-electromechanical Systems to Optoelectronics," International Electron Devices and Materials Symposium, Hsinchu, Taiwan, Dec. 1996. (Invited)

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  267. J. S. Harris, Jr., "Application of Micro-Electromechanical Systems to Optoelectronics," Advisory Group on Electron Devices Workshop, San Diego, May 1997 (Invited)

  268. F. Sugihwo, C-C.Lin, W. Martin, M. C. Larson and J. S. Harris, Jr., "25nm Wavelength Range Tunable Vertical Cavity Lasers," 55th Annual Device Research Conference, Fort Collins, CO, June 1997.

  269. S. Komarov and J. S. Harris, Jr., "Lateral Ordering of Stacked Self-Assembled Islands of InAs on GaAs," Nanostructures: Physics and Technology Conference, St Petersburg, Russia, 23 - 27 June 1997.

  270. F. Sugihwo, M. C. Larson and J. S. Harris, Jr., "Performance Trade-offs for Microelectromechanical Tunable VCSELs," CLEO/Pacific Rim997, Chiba, Japan, July 1997.

  271. G. S. Solomon, Y. Yamamoto and J. S. Harris, Jr., "Increased Surface Ordering of InAs Island Arrays Using a Multi-Dot Column Subsurface Structure," International Symposium on Modulated Semiconductors and Superlattices, Santa Barbara, CA, July 1997.

  272. J. S. Harris, Jr., "Application of Single Electron Devices and Quantum Dots to Quantum Computing," Workshop on Quantum Computers, Harvard Observatory, Cambridge, MA, Aug. 2-6, 1997 (Invited)

  273. F. Sugihwo, M. C. Larson and J. S. Harris, Jr., "Monolithically Micromachined Wavelength Tunable Vertical Cavity Lasers," The Electrochemical Society9s 1997 Joint International Meeting, Paris, France, Aug. 30- Sept. 3 1997.

  274. F. Sugihwo, C. C. Lin, M. C. Larson and J. S. Harris, Jr., "Micromachined Tunable Vertical Cavity Lasers as Wavelength Selective Tunable Photodetectors," International Symposium on Compound Semiconductors, San Diego, CA, Sept. 8 - 11, 1997.

  275. T. F. Huang, T. Ueda, S. Spruytte and J. S. Harris, Jr., "Growth and Defects of Single Crystalline ZnO Buffer Layer on GaN," International Symposium on Compound Semiconductors, San Diego, CA, Sept. 8 - 11, 1997.

  276. S. A. Komarov, G. S. Solomon and J. S. Harris, Jr., "Increased Surface Ordering of InAs Island Arrays Using a Multi-Dot Column Subsurface Structure," International Symposium on Compound Semiconductors, San Diego, CA, Sept. 8 - 11, 1997.

  277. C.-Y. Hung, J. S. Harris, Jr., A. F. Marshall and R. A. Kiehl, "Arsenic Precipitation in GaAs for Single-Electron Tunneling Applications," International Symposium on Compound Semiconductors, San Diego, CA, Sept. 8 - 11, 1997.

  278. A. R. Massengale, C. Y. Tai, M. D. Deal, J. D. Plummer and J. S. Harris, Jr., "Localized Intermixing of AlAs and GaAs Layers for Lithographic Control of the Lateral Oxidation of AlAs," International Symposium on Compound Semiconductors, San Diego, CA, Sept. 8 - 11, 1997.

  279. Y. Okada, S. Amano, M. Kawabe, B. Shimbo and J. S. Harris, Jr., "Atomic Force Microscope Nanoscale Lithography for Single-Electron Device Applications," International Symposium on Compound Semiconductors, San Diego, CA, Sept. 8 - 11, 1997.

  280. Y. C. Pao and J. S. Harris, Jr., "Two-dimensional Device Simulation for PHEMT Material and Process Control," International Symposium on Compound Semiconductors, San Diego, CA, Sept. 8 - 11, 1997.

  281. F. Sugihwo, M. C. Larson and J. S. Harris, Jr., "30nm Wavelength Tunable Vertical Cavity Lasers," International Solid State Devices and Materials Conference, Hamamatsu, Japan, Sept. 16 - 19, 1997.

  282. K. Matsumoto, Y. Gotoh, J. I. Shirakashi, T. Maeda and J. S. Harris, Jr., "Single Electron Transistor on Atomically Flat a - Al2O3 Substrate Made by AFM Nano-oxidation Process," International Solid State Devices and Materials Conference, Hamamatsu, Japan, Sept. 16 - 19, 1997 (Invited)

  283. C. M. Marcus, S. R. Patel, S. M. Cronenwett, D. R. Stewart, A. G. Huibers, J. S. Harris, Jr., K. Campman, and A. C. Gossard, "Experiments on the Statistics of Coulomb Blockade Peak Spacing: Beyond Random Matrix Theory," Twelfth International Conference on the Electronic Properties of Two-Dimensional Systems, Tokyo, Japan, Sept. 1997. (Invited)

  284. D. R. Stewart, D. Sprinzak, C. M. Marcus, C. I Duruvz and J. S. Harris, Jr., "Correlations between Ground and Excited State Spectra of a Quantum Dot," Twelfth International Conference on the Electronic Properties of Two-Dimensional Systems, Tokyo, Japan, Sept. 1997.

  285. K. L. McCormick, M. Woodside, M. Huang, P. L. McEuen, C. I. Duruvz and J. S. Harris, Jr., "Scanned Potential Microscopy of a Two-dimensional electron gas," Twelfth International Conference on the Electronic Properties of Two-Dimensional Systems, Tokyo, Japan, Sept. 1997.

  286. J. S. Harris, Jr., "Application of Midroelectromechanical Systems to Optoelectronics," Advanced Technology Review, Tokyo, Japan, Sept. 1997. (Invited)

  287. J. S. Harris, Jr., "NMR Quantum Computers," Advanced Technology Review, Tokyo, Japan, Sept. 1997. (Invited)

  288. W. Martin, F. Sugihwo and J. S. Harris, Jr., "Frequency Locking of a Micromachined Tunable VCSEL for WDM Optical Interconnects," OSA Annual Meeting, Long Beach, CA, Oct. 12 -17, 1997.

  289. F. Sugihwo, M. C. Larson and J. S. Harris, Jr., "Micromachined Wavelength Tunable Optoelectronic Devices," OSA Annual Meeting, Long Beach, CA, Oct. 12 -17, 1997.

  290. C. C. Lin and J. S. Harris, Jr., "Electromechanical Tuning of Lasing Wavelength of Vertical Cavity Lasers," American Vacuum Society 44th National Symposium, San Jose, CA, Oct. 20, 1997.

  291. G. S. Solomon and J. S. Harris, Jr., "Increased Ordering in Vertically Coupled InAs Quantum Dot Arrays," American Vacuum Society 44th National Symposium, San Jose, CA, Oct. 20, 1997. (Invited)

  292. G. S. Solomon and J. S. Harris, Jr., "Increased Ordering in Vertically Coupled InAs Quantum Dot Arrays," Third International Meeting on Quantum Functional Devices, Gaithersburg, MD, Nov. 1997 (Invited)

  293. L. M. Franca-Neto, E. Mao and J. S. Harris, Jr., "Low Noise FET Design for Wireless Communications," International Electron Devices Meeting, Washington, DC, Dec. 6 - 8, 1997.

  294. K. Matsumoto, Y. Gotoh, J-i Shirakashi, T. Maeda and J. S. Harris, Jr., "Fabrication of Single Electron Memory on Atomically Flat a-Al2O3 Substrate made by AFM Nano-Oxidation Process," International Electron Devices Meeting, Washington, DC, Dec. 6 - 8, 1997.

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  295. I. L. Chuang, L. M. K. Vandersypen and J. S. Harris, Jr., "Bulk Spin Quantum Computation: Toward Large Scale Quantum Computation," IEEE International Solid State Circuits Conference, San Francisco, CA, Feb. 1998 (invited)

  296. B. A. Paldus, T. G. Spence, C. C. Harb, B. Willke, M. D. Levenson, J. S. Harris, Jr., and R. N. Zare, "Advances in CW Cavity ring-down Spectroscopy," International Quantum Electronics Conference, 1998.

  297. E. Mao, C. Coldren, J. S. Harris, Jr., D. Yankelevich, O. Solgaard and A. Knoesen, "In-line Fiber-optic Filter using GaAs ARROW Waveguide," CLEO, 1998, San Francisco, April, 1998.

  298. L. A. Eyres, C. B. Ebert, M. M. Fejer and J. S. Harris, Jr., "MBE Growth of Laterally Antiphase-patterned GaAs Films using Thin Ge Layers for Waveguide Mixing," CLEO 1998, San Francisco, April, 1998.

  299. J. S. Harris, Jr., "New Materials and Devices for Long Wavelength for Agile Laser Communications," LASERCOM, Arlington, VA, May 1998.

  300. M. B. Yairi, C. W. Coldren, D. A. B. Miller and J. S. Harris, Jr., "High-Speed Quantum Well Optoelectronic Gate Based on Diffuse Conduction Recovery," Optics in Computing - OC'98, Brugge, Belgium (June 17-20, 1998).

  301. J. S. Harris, Jr., "Beyond ULSI-Is There Anything There?" Fifth Hitachi-Cambridge ULSI Symposium, Cambridge, England, July 1998. (invited)

  302. L. M. Franca-Neto and J. S. Harris, Jr., "Low Noise Silicon RF FET Design using Graded Doping and Stress," First Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Ann Arbor MI., Sept. 1998.

  303. J. S. Harris, Jr., "Tunable Microcavity Semiconductor Lasers," Microcavity Lasers Conference, Ascona, Switzerland, Sept. 1998.

  304. C. B. Ebert, L. A. Eyres, M. M. Fejer and J. S. Harris, Jr., "MBE Growth of Antiphase GaAs Films using GaAs/Ge/GaAs Heteroepitaxy," Tenth International Molecular Beam Epitaxy Conference, Cannes, France, Sept. 1998.

  305. Y. Okada, Y. Iuchi, M. Kawabe and J. S. Harris Jr., "GaAs/AlGaAs Oxide Tunnel Barriers Fabricated by Atomic Force Microscope Tip-Induced Nano-Oxidation Technique," 25th International Symp. on Compound Semiconductors, Nara, Japan, Oct. 1998

  306. J. S. Harris, Jr., "New Approaches to Quantum Computing," Advanced Heterostructures Workshop, Hawaii, Dec. 1998. (invited)

  307. J. S. Harris, Jr., "New Materials for Long Wavelength Lasers," Advanced Heterostructures Workshop, Hawaii, Dec. 1998. (invited)

  308. F. Sugihwo, C-C. Lin, L. A. Eyres, M. M. Fejer and J. S. Harris, Jr., "Broadly-tunable Narrow-linewidth Micromachined Laser/photodetector and Phototransistor," IEEE IEDM, San Francisco, CA, Dec. 1998

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  309. J. S. Harris, Jr., "Long Wavelength Optoelectronic Devices Using GaInNAs," Lecture Paul Drude Institute, Berlin, Germany, Feb. 1999

  310. J. S. Harris, Jr., "A World Beyond ULSI," Humboldt University, Berlin, Germany, March 1999 (invited).

  311. J. S. Harris, Jr., "A World Beyond ULSI," Walter Schottky Lecture, Aachen University, Aachen, Germany, June 1999 (invited).

  312. J. S. Harris, Jr., "Experimental Quantum Computation," German Physical Society-Magnus House, Berlin, Germany, May 1999 (invited).

  313. J. S. Harris, Jr., "Experimental Quantum Computation," Max Planck Institute, Stuttgart, Germany, May 1999 (invited).

  314. J. S. Harris, Jr., "Tunable Optoelectronic Devices," University Ruhr-Bochum, Bochum, Germany, May 1999 (invited).

  315. J. S. Harris, Jr., "Experimental Quantum Computation," University of Wuppertal, Wuppertal, Germany, May 1999 (invited).

  316. J. S. Harris, Jr., "Tunable Optoelectronic Devices," Ferdinand Braun Institute, Adlershof, Germany, May 1999 (invited).

  317. J. S. Harris, Jr., "Tunable Optoelectronic Devices," Lecture Technical University of Einhoven, Einhoven, The Netherlands, June 1999 (invited).

  318. E. Mao, C. W. Coldren, J. S. Harris Jr., D. R. Yankelevich, O. Solgaard and A. Knoesen, "A GaAs/AlGaAs Narrow Bandwidth In-line Fiber Filter", 18th Congress of the International Commission for Optics, San Francisco, 1999.

  319. J. S. Harris, Jr., "Long Wavelength Optoelectronic Devices Using GaInNAs," Ecole Polytechnique de Federal Lausanne, Lausanne, Switzerland, Aug. 1999 (invited).

  320. C. W. Coldren, S. G. Spruytte, A. F. Marshall, J. S. Harris, Jr., and M. C. Larson, "MBE Growth of Nitride-Arsenide Materials for Long Wavelength Optoelectronics," 18th North American Conference on MBE, Banff, Alberta, Canada, Oct. 1999.

  321. S. A. Komarov, G. S. Solomon and J. S. Harris Jr., "Growth Factors and Properties of InAs Islands on Ge and GaAs," 18th North American Conference on MBE, Banff, Alberta, Canada, Oct. 1999.

  322. C. W. Coldren, S. G. Spruytte and J. S. Harris, Jr., "Group III-Nitride-Arsenide Long Wavelength Lasers Grown by Elemental Source Molecular Beam Epitaxy," LEOS Annual Meeting, San Francisco, Nov. 1999.

  323. M. B. Yairi, H. V. Demir, C. W. Coldren, D. A. B. Miller and J. S. Harris, Jr., "Optically-Controlled Optical Gate Using a Double Diode Structure," CLEO Annual Meeting, San Francisco, Nov. 1999.

  324. W. Ha, R. Urata, J. S. Harris, Jr., and D. A. B. Miller, "Low Temperature Growth of GaAs for AD/DA converter, MARCO Workshop, Atlanta, GA, Dec. 1999.

  325. S. G. Spruytte , C. W. Coldren, A. F. Marshall, M. C. Larson and J. S. Harris, Jr., "MBE Growth of Nitride-arsenide Materials for Long Wavelength Optoelectronics," 1999 MRS Fall Meeting, Boston, MA, Dec. 1999.

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  326. H. Liu, C-C. Lin and J. S. Harris, Jr., "Vertical Cavity Modulator for Optical Interconnection and its High Speed Performance," Photonics West 2000, San Jose, CA, Jan. 2000.

  327. E. Mao, C. W. Coldren, J. S. Harris, Jr., D. R. Yankelevich, O. Solgaard and A. Knoesen, "Multiple-quantum-well GaAs/AlGaAs In-line Fiber Intensity Modulators," Photonics West 2000, San Jose, CA, Jan. 2000.

  328. J. S. Harris, Jr. "GaInNAs, a New Material for Long Wavelength Lasers," Agilent Colloquium, Palo Alto, CA, Feb. 2000. (invited)

  329. S. G. Spruytte, C. W. Coldren, A. F. Marshall, M. C. Larson and J. S. Harris, Jr., "Incorporation of Nitrogen in Nitride-Arsenide Materials for Long Wavelength Opto-electronic Devices," AVS First International Conference on Microelectronics and Interfaces, Santa Clara, CA, Feb. 2000.

  330. L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, Jr., M. M. Fejer, B. Gerard, L. Becouarn and E. Lallier, "Quasi-phasematched Frequency Conversion in Thick All-epitaxial, Orientation-patterned GaAs Films," Advanced Solid-State Lasers Conference, Davos, Switzerland, Feb. 2000. (invited)

  331. S. G. Spruytte, C. W. Coldren, A. F. Marshall, M. C. Larson and J. S. Harris, Jr., "Incorporation of Nitrogen in Nitride-Arsenide Materials for long Wavelength Opto-electronic Devices," AVS First International conference on Microelectronics and Interfaces, San Jose, CA, 2000.

  332. S. G. Spruytte, C. W. Coldren, A. F. Marshall and J. S. Harris, Jr., "Compositional Evolution and Structural Changes during Anneal of Group III-Nitride-arsenide Alloys," MRS Spring 2000 Meeting, San Francisco, April 2000.

  333. J. S. Harris, Jr., "GaInNAs: A New Materials for Long Wavelength VCSELs," E-TEK Dynamics Seminar, San Jose, CA, April 2000. (invited)

  334. J. S. Harris, Jr., "GaInNAs: A New Materials for Long Wavelength VCSELs," LEOS Semiconductor Laser Workshop, San Francisco, May 2000. (invited)

  335. S. G. Spruytte, C. W. Coldren, A. F. Marshall, M. C. Larson and J. S. Harris, Jr., "MBE Growth of Group III-Nitrides for Long Wavelength Opto-Electronic Devices on GaAs Substrates," 197th Electrochemical Society Meeting, Toronto, Canada, May 2000.

  336. L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, Jr., M. M. Fejer, B. Gerard, L. Becouarn and E. Lallier, "Thick (2005m Orientation-patterned GaAs for Bulk Quasi-phasematched Nonlinear Frequency Conversion," CLEO, San Francisco, May 2000. (invited)

  337. M. C. Larson, C. W. Coldren, S. G. Spruytte, H. E. Petersen and J. S. Harris, Jr., "Room Temperature Continuous-wave Operation of GaInNAs Long Wavelength VCSELs," IEEE Device Research Conference, Denver, June 2000.

  338. S. G. Spruytte, M. C. Larson, C. W. Coldren, V. Sabnis and J. S. Harris, Jr., "MBE Growth of Group III-Nitrides-Arsenides for Long Wavelength Optoelectronics," TMS Electronic Materials Conference, Denver, CO, June 2000.

  339. S. G. Spruytte, C. W. Coldren, M. C. Larson and J. S. Harris, Jr., "Incorporation of Nitrogen in Group III-Nitrides-Arsenides Grown by MBE," 11th International Semiconducting and Insulating Materials Conference (SIMC-XI), Canberra, Australia, 2000.

  340. J. S. Harris, Jr., "GaInNAs, a New Material for Long Wavelength Lasers," Paul Drude Institute for Solid State Physics, Berlin, Germany, July 2000. (invited)

  341. W. Martin, C-C. Lin, F. Sughiwo and J. S. Harris, Jr., "Frequency Locking of Micromachined Tunable VCSELs to External Wavelength Selective Filters," LEOS Summer Topical Meetings, Turnberry Island, FL, July 2000.

  342. J. S. Harris, Jr., "GaInNAs, a New Material for Long Wavelength Lasers," IEEE LEOS Summer Topicals Meeting, Copper Mountain, CO, Aug. 2000. (invited)

  343. J. S. Harris, Jr., "GaInNAs, a New Material for Long Wavelength Lasers," Physics Department Seminar University of Marburg, Marburg, Germany, Aug. 2000. (invited)

  344. C-C. Lin, W. Martin and J. S. Harris, Jr., "Modeling of MEMS Tunable Optoelectronic Device Mirror," LEOS Optical MEMs Meeting, Kauai, HI, Aug. 2000.

  345. D. Jackrel and J. S. Harris, Jr., "Photodiode Development for LIGO II," LIGO Scientific Community Conference, Hanford, WA, Aug. 2000.

  346. J. S. Harris, Jr., S. Spruytte, M. Larson, C. Coldren, V. Gambin, M. Wistey and S. Bond, "Low-Voltage Optical Interconnects using GaInNAs," MARCO Workshop, Atlanta, GA, Aug. 2000.

  347. T. Pinguet, L. Eyres, C.B. Ebert, O. Levi, M. Fejer, J. S. Harris, Jr., "Epitaxial Orientation-Patterning of AlGaAs Films for Nonlinear Optical Devices," International Semiconductor Laser Conference, Monterey, CA, Sept. 2000.

  348. S. G. Spruytte, M. C. Larson, C. W. Coldren, J. S. Harris, "Long Wavelength Vertical Cavity Lasers," International Symposium on Compound Semiconductors, Monterey, CA, Sept. 2000.

  349. S. G. Spruytte, M. C. Larson, C. W. Coldren, V. Sabnis, J. S. Harris, "MBE Growth of Group III-Nitrides-Arsenides for Long Wavelength Optoelectronics," International Semiconductor Laser Conference, Monterey, CA, Sept. 2000.

  350. S. G. Spruytte, C. W. Coldren, M. C. Larson and J. S. Harris, Jr., "Nitrogen Incorporation in Group III-Nitride-Arsenide Materials Grown by Elemental Source MBE," Eleventh International Conference on Molecular Beam Epitaxy (MBE-XI), Beijing, China, Sept. 2000 (invited).

  351. E. Mao, C. Lin, O. Solgaard and J. S. Harris, Jr., "Narrow-Band Light Emission in a Semiconductor-Fiber Asymmetric Waveguide Coupler," International Semiconductor Laser Conference, Monterey, CA, Sept. 2000.

  352. M. Wistey, W. Ha, C. Coldren, S. Spruytte, M. Larson and J. S. Harris, Jr., "Long Wavelength Vertical Cavity Surface Emitting Lasers," CNOM Meeting, Stanford University, Sept. 2000.

  353. M. Wistey, V. Gambin, S. Spruytte, M. Larson, C. Coldren and J. S. Harris, Jr., "Long Wavelength, GaAs-Based VCSELs," CIS AdCom, Stanford University, Oct. 2000.

  354. M. Wistey, V. Gambin, S. Spruytte, M. Larson, C. Coldren and J. S. Harris, Jr., "Long Wavelength, GaAs-Based VCSELs," LAM Grand Opening, Stanford University, Oct. 2000.

  355. S. G. Spruytte, M. C. Larson, C. W. Coldren, V. A. Sabnis, and J. S. Harris, Jr., "MBE Growth of Group III-Nitrides-Arsenides for Long Wavelength Opto-electronics," 19th annual North American Conference on Molecular Beam Epitaxy, Tempe, AZ, Oct. 2000.

  356. J. S. Harris, Jr., "GaInNAs, a New Material for Long Wavelength Lasers," Applied Physics Optics Seminar, Stanford, CA, Oct. 2000.

  357. J. S. Harris, "The role of Photonics in Quantum Computation," Advanced Heterojunction Technology Workshop, Kona, HI, Dec. 2000

  358. B. E. Nelson, M. Gerken, D. A. B. Miller, R. Piestun, C-C. Lin and J. S. Harris, Jr., "Wavelength Demultiplexing by Beam Shifting Using a Dielectric Stack as a One-Dimensional Photonic Crystal," Proc of LEOS, 2000

  359. L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, Jr., M. M. Fejer, B. Gerard, L. Becouarn and E. Lallier, "All-epitaxial Orientation-patterned GaAs for Nonlinear Optical Frequency Conversion," Proc. of LEOS, 2000

  360. M. C. Larson, C. W. Coldren, S. G. Spruytte, H. E. Petersen and J. S. Harris, Jr., "Low Threshold Current Continuous-Wave GaInNAs/GaAs VCSELs," Proc. of IEEE, 2000

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  361. S. G. Spruytte, M. A. Wistey, M. C. Larson, C. W. Coldren, H. Garrett and J. S. Harris, Jr., "1.3 Micron Opto-electronic Devices on GaAs using Group III-Nitride-Arsenides," Photonics West 2001, San Jose, CA, 2001.

  362. J. S. Harris, Jr., "Optical Micro-Electro-Mechanical Systems (O-MEMS)," Short course at March American Physical Society Meeting, Seattle, WA, March 2001

  363. T. J. Pinguet, O. Levi, T. Skauli, L. A. Eyres, L. Scacabarozzi, M. M. Fejer, J. S. Harris, Jr., T. J. Kulf, S. Brisson, B. Gerard, L. Becauarn and E. LaIlier, "Characterization of 0.5mm thick Films of Orientation-Patterned GaAs for Nonlinear Optical Application," CLEO '01, May 2001.

  364. O. Levi, T. J. Pinguet, T. Skauli, L. A. Eyres, L. Scaccabarozzi, M. M. Fejer, J. S. Harris, Jr., T. J. Kulp, S. Bisso, B. Gerard, L. Becouarn and E. Lallier, "Mid-Infrared Generation by Difference-Frequency Mixing in Orientation-Patterend GaAs," CLEO '01, May 2001.

  365. C.-C. Lin, W. A. Martin and J. S. Harris, Jr., "Opto-Mechanical Model of Surface Micromachined Tunable Optoelectronic Devices," CLEO '01, May 2001.

  366. R. Urata, R. Takahashi, V. A. Sabnis, D. A. B. Miller and J. S. Harris, Jr., "High-speed Sample and Hold Using Low Temperature Grown GaAs MSM Switches for Photonic A/D Conversion," CLEO '01, May 2001.

  367. M. C. Larson, C. W. Coldren, S. G. Spruytte, H. E. Peterson, H. E. Garrett and J. S. Harris, Jr., "GaInNAs Long Wavelength Vertical Cavity Lasers," CLEO/Pacific Rim May 2001.

  368. J. S. Harris, Jr., "GaInNAs, a New Material for Long Wavelength VCSELs," LEOS Summer Topical Meetings, July 2001

  369. S. G. Spruytte, M. C. Larson, W. Wampler, C. W. Coldren and J. S. Harris, Jr., "Molecular Beam Epitaxy Growth of Group III-Nitrides-Arsenides for Long Wavelength Optoelectronics," 27th International Symposium on Compound Semiconductors, Monterey, CA, Sept. 2001.

  370. E. Thrush, O. Levi, K. Wang, S. Smith, J. S. Harris, Jr., "Integrated Bio-Florescence Sensor, Stanford Photonics Research Center Review, Stanford, CA, Sept. 2001

  371. J. S. Harris, Jr., "GaInNAs, a New Material for Long Wavelength Lasers,", Stanford Photonics Research Center Review, Stanford, CA, Sept. 2001.

  372. T. J. Pinguet, L. Scaccabarozzi, O. Levi, T. Skauli, L. A. Eyres, M. M. Fejer and J. S. Harris, Jr., "Second Harmonic Generation in Orientation-Patterned AlGaAs Waveguides Pumped at 1.55 /spl mu/m," LEOS, Nov. 2001.

  373. C.-C. Lin, J. Fu and J. S. Harris, Jr., "Widely Tunable Micromachined Optical Filter with Adjustable Tuning Chracteristics," LEOS, Nov. 2001.

  374. V. Sabnis, H. V. Demir, M. Yairi, D. A. B. Miller and J. S. Harris, Jr., "Observation of Wavelength-Converting Optical Switching at 2.5 GHz in a Surface-Normal Illuminated Waveguide," LEOS, Nov. 2001.