Click to see me slide down a mountain.. Seth R. Bank

Professor James S. Harris Group

Solid State and Photonics Laboratory

Stanford University


Biography and Research Interests

More Recently:

I am currently an Assistant Professor in the ECE department at The University of Texas at Austin, where I head the MBE effort. Our focus is on new materials for mid-IR laser sources, THz generation, and III-V transistors.

In 2006, I was a post-doc in the ECE and Materials departments at beautiful UC-Santa Barbara, working with Professors Arthur Gossard and Mark Rodwell on novel semimetal/semiconductor nanocomposites and their related device applications. I was privileged to work with the great John English and Andy Jackson on novel MBE troubleshooting, maintenance, and related activities.

Previously:

I was a Ph.D. candidate in Electrical Engineering at Stanford University in the Harris Research Group, and received my Ph.D. in April 2006. I started working for The Coach (A.K.A. Professor James S. Harris*) when I first came to Stanford in the Fall of 2000. After learning both the art and science of molecular beam epitaxy (MBE), I was engaged in growth and fabrication of GaInNAsSb lasers (edge-emitting and vertical-cavity) grown on GaAs. Lasers emitting ~1.5 μm are critically important to both long-haul and metro area networks. GaInNAsSb lasers, grown on GaAs, have potential advantages over those made from conventional InP-based alloys. Just recently, we succeeded in demonstrating the first low threshold CW lasers in this range (1.55 μm) and the first GaAs-based VCSEL beyond ~1.3 μm (see publications below).

My co-conspirators in III-N-As-Sb epitaxy were Mark Wistey, Homan Yuen and Hopil Bae. Together we babysat, fixed, lorded over, repaired, calibrated, mended, tweaked, patched up, troubleshot, welded, and leak checked the GaInNAsSb machine (Sys5™) and the DBR machine (Sys4™). Two chambers are needed for VCSELs because there are only eight source ports on the Varian Gen II machines. This allows multiple compositions of AlGaAs throughout the DBR without temperature grading or thousands of shuttering operations. Other partners in crime included Lynford Goddard, Vincenzo Lordi, and former students Vincent Gambin (Northrop Grumman), Wonill Ha (Novalux), and Kerstin Volz (Philipps-Universität Marburg).

Long Ago:

Before coming to Stanford, I did my undergrad (95-99) at The University of Illinois at Urbana-Champaign in EE. From 1999-2000 I was a research assistant in the late Professor Gregory Stillman's group (at Illinois) where I worked on fabrication of InGaP/GaAs and InGaAs/InP HBTs.


Epitaxial Metal/Semiconductor Heterostructures and Related Publications:

1. (Plenary) M. Rodwell, Z. Griffith, N. Parthasarathy, E. Lind, C. Sheldon, S.R. Bank, U. Singisetti, M. Urteaga, K. Shinohara, R. Pierson, and P. Rowell, "Developing Bipolar Transistors for Sub-mm-Wave Amplifiers and Next-Generation (300 GHz) Digital Circuits," 64th Device Research Conference (DRC), University Park, PA, June 2006.

2. (Plenary) A.C. Gossard, M.P. Hanson, J.M.O. Zide, J.D. Zimmerman, and S.R. Bank "Growth and Uses of Metal/Semiconductor Heterostructures," 48th Electronic Materials Conference (EMC), University Park, PA, June 2006.

3. S.R. Bank, U. Singisetti, A.M. Crook, J.D. Zimmerman, J.M.O. Zide, A.C. Gossard, and M.J.W. Rodwell,"MBE Growth of ErAs/In(Ga)As Epitaxial Ultra-Low Resistance Ohmic Contacts," to be presented at the 2006 North American Molecular Beam Epitaxy Conference (NAMBE), Durham, NC, October 2006.

Selected Publications (Dilute Nitrides):

1. S.R. Bank, M.A. Wistey, H.B. Yuen, L.L. Goddard, W. Ha, and J.S. Harris, "Low-threshold CW GaInNAsSb/GaAs Laser at 1.49 μm," Electronics Letters, 2 Oct. 2003, vol. 39, no. 20, pp1445-6. [PDF]

2. M. A. Wistey, S.R. Bank, H.B. Yuen, L.L. Goddard, and J.S. Harris, "Monolithic, GaInNAsSb VCSELs at 1460nm on GaAs by MBE," Electronics Letters, 11 Dec. 2003, vol. 39, no. 25, pp. 1822-1823. [PDF]

3. S.R. Bank, M.A. Wistey, L.L. Goddard, H.B. Yuen, V. Lordi, and J.S. Harris, "Low Threshold, Continuous Wave, 1.5 μm GaInNAsSb Lasers Grown on GaAs," IEEE Journal of Quantum Electronics, June 2004, vol. 40, no. 6, pp. 656-664. [PDF]

4. S.R. Bank, M.A. Wistey, L.L. Goddard, H.B.Yuen, H.P. Bae, and J.S. Harris, "High-Performance 1.5 μm GaInNAsSb Lasers on GaAs," Electronics Letters, 16 Sept. 2004, vol. 40, no. 19, pp. 1186-1187.[PDF]

5. D. Gollub, M. Kamp, A. Forchel, J. Seufert, S.R. Bank, M.A. Wistey, L.L. Goddard, H.B.Yuen, and J.S. Harris, "Continuous-Wave Operation of GaInNAsSb Distributed Feedback Lasers at 1.5 μm," Electronics Letters, 11 Nov. 2004, vol. 40, no. 23, pp. 1487-1488.[PDF]

6. L.L. Goddard, S.R. Bank, M.A. Wistey, H.B. Yuen, Z.L. Rao, and J.S. Harris, "Recombination, Gain, Band Structure, Efficiency, and Reliability of 1.5 μm GaInNAsSb/GaAs Lasers," Journal of Applied Physics, 15 April 2005, vol. 97, no. 8, pp. 83101.[PDF]

7. S.R. Bank, M.A. Wistey, H.B. Yuen, V. Lordi, V. F. Gambin, and J.S. Harris, "Effects of Antimony and Ion Damage on Carrier Localization in MBE-Grown GaInNAs," Journal of Vacuum Science and Technology B, May/June 2005, vol. 23, no. 3, pp. 1320-1323.[PDF]

8. S.R. Bank, M.A. Wistey, H.B. Yuen, L.L. Goddard, H.P. Bae, and J.S. Harris, "MBE Growth of Low-Threshold CW GaInNAsSb Lasers at 1.5 μm," Journal of Vacuum Science and Technology B, May/June 2005, vol. 23, no. 3, pp. 1337-1339.[PDF]

9. S.R. Bank, H.B. Yuen, M.A. Wistey, V. Lordi, H.P. Bae, and J.S. Harris, "Effects of Growth Temperature on the Structural and Optical Properties of 1.55 μm GaInNAsSb Quantum Wells Grown on GaAs," Applied Physics Letters, June 2005, 87, 021908.[PDF]

10. S.R. Bank, L.L. Goddard, M.A. Wistey, H.B. Yuen, and J.S. Harris, "On the Temperature Sensitivity of 1.5 μm GaInNAsSb Lasers," IEEE Journal of Selected Topics in Quantum Electronics 2005, Sept.-Oct. 2005, vol. 11, no. 5, pp. 1089-1098.[PDF]

11. S.R. Bank, H.P. Bae, H.B. Yuen, M.A. Wistey, L.L. Goddard, and J.S. Harris, "Room-Temperature Continuous-Wave 1.55-μm GaInNAsSb Laser on GaAs" Electronics Letters, 2 Feb. 2006, vol. 42, no. 3, pp. 39-40.[PDF]

12. S.R. Bank, H.B. Yuen, H.P. Bae, M.A. Wistey, and J.S. Harris, "Over-Annealing Effects in GaInNAs(Sb) Alloys and Their Importance to Laser Applications," Applied Physics Letters, June 2006, vol. 88, no. 22, pp. 221115-1-3.[PDF]

13. S.R. Bank, H.B. Yuen, H.P. Bae, M.A. Wistey, A. Moto, and J.S. Harris, "Enhanced Luminescence in GaInNAsSb Quantum Wells Through Variation of the Arsenic and Antimony Fluxes," Applied Physics Letters, June 2006, vol. 88, no. 24, pp. 231923-1-3.[PDF]

14. S.R. Bank, H.P. Bae, L.L. Goddard, H.B. Yuen, M.A. Wistey, R. Kudrawiec, and J.S. Harris, "Recent Progress on 1.55-μm Dilute-Nitride Lasers," IEEE Journal of Quantum Electronics, Sept. 2007, vol. 43, no. 7, pp. 773-785.

Selected First Author Presentations:

1. S.R. Bank, M.A. Wistey, H.B. Yuen, L.L. Goddard, and J.S. Harris, "Low Threshold, CW, Room Temperature 1.49 μm GaAs-Based Lasers," 61st Device Research Conference (Late News), Salt Lake City, UT, June 2003. [PDF]

2. S. R. Bank, H. B. Yuen, W. Ha, V. F. Gambin, M. A. Wistey, J. S. Harris, "Strong Photoluminescence Enhancement of 1.3 μm GaInNAs Active Layers by Introduction of Antimony," 45th Electronic Materials Conference (EMC), Salt Lake City, UT, June 2003. (Received a Student Paper Award). [PDF]

3. S.R. Bank, M.A. Wistey, H.B. Yuen, L.L. Goddard, and J.S. Harris, "Low Threshold, CW, Room Temperature 1.5 μm GaAs-Based Lasers," 30th International Symposium on Compound Semiconductors (ISCS), San Diego, CA, August 2003. [PDF]

4. S.R. Bank, M.A. Wistey, H.B. Yuen, L.L. Goddard, and J.S. Harris, "Progress Towards High Power 1.5 μm GaInNAsSb/GaAs Lasers for Raman Amplifiers," 2004 Optical Fiber Communication Conference (OFC), Los Angeles, CA, February 2004. [PDF]

5. S.R. Bank, L.L. Goddard, M.A. Wistey, H.B. Yuen, and J.S. Harris, "The Temperature Sensitivity of GaAs-Based 1.5 μm GaInNAsSb Lasers," 2004 Conference on Lasers and Electro Optics (CLEO), San Francisco, CA, May 2004.

6. S.R. Bank, V. Lordi, M.A. Wistey, H.B. Yuen, and J.S. Harris, "Temperature Dependent Behavior of GaInNAs(Sb) Alloys Grown on GaAs," 46th Electronic Materials Conference (EMC), Notre Dame, IN, June 2004.

7. S.R. Bank, M.A. Wistey, H.B. Yuen, L.L. Goddard, and J.S. Harris, "The Role and Suppression of Carrier Leakage in 1.5 μm GaInNAsSb/GaAs Lasers," 62nd Device Research Conference (DRC), Notre Dame, IN, June 2004.

8. S.R. Bank, M.A. Wistey, H.B. Yuen, V. Lordi, V. F. Gambin, and J.S. Harris, "Effects of Antimony and Ion Damage on Carrier Localization in MBE-Grown GaInNAs," 2004 North American Molecular Beam Epitaxy Conference (NAMBE), Banff, Canada, October 2004. (Received a Student Paper Award).

9. S.R. Bank, M.A. Wistey, H.B. Yuen, L.L. Goddard, H.P. Bae, and J.S. Harris, "MBE Growth of Low-Threshold CW GaInNAsSb Lasers at 1.5 μm," 2004 North American Molecular Beam Epitaxy Conference (NAMBE), Banff, Canada, October 2004.

10. (Invited) S.R. Bank, M.A. Wistey, H.B. Yuen, V. Lordi, L.L. Goddard, H.P. Bae, and J.S. Harris, "Growth of High-Quality GaInNAsSb Layers on GaAs by Molecular Beam Epitaxy," 2005 Electronic Materials Symposium (EMS), Santa Clara, CA, April 2005. (Ross Tucker Award)

11. S.R. Bank, M.A. Wistey, L.L. Goddard, H.B. Yuen, H.P. Bae, and J.S. Harris, "1.55 μm GaInNAsSb Lasers," 2005 Conference on Lasers and Electro Optics (CLEO), Baltimore, MD, May 2005.

12. S.R. Bank, H.B. Yuen, M.A. Wistey, V. Lordi, H.P. Bae, and J.S. Harris, "Effects of Growth Temperature on the Optical Behavior of GaInNAsSb Alloys," 47th Electronic Materials Conference (EMC), Santa Barbara, CA, June 2005.

13. S.R. Bank, H.B. Yuen, H.P. Bae, M.A. Wistey, and J.S. Harris, "MBE Growth of High-Efficiency GaInNAsSb Quantum Wells from 1.45 - 1.55 μm," 2005 North American Molecular Beam Epitaxy Conference (NAMBE), Santa Barbara, CA, October 2005.

14. S.R. Bank, H.P. Bae, H.B. Yuen, L.L. Goddard, M.A. Wistey, T. Sarmiento, and J.S. Harris, "Low-Threshold CW 1.55-μm GaAs-Based Lasers," 2006 Optical Fiber Conference (OFC), Anaheim, CA, March 2006. [PDF]

15. S.R. Bank, H.P. Bae, H.B. Yuen, M.A. Wistey, L.L. Goddard, J.S. Harris, R. Kudrawiec, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Low-Threshold Continuous-Wave 1.55-μm GaInNAsSb lasers," 2006 Conference on Lasers and Electro Optics (CLEO), Long Beach, CA, May 2006.

16. S.R. Bank, H.P. Bae, H.B. Yuen, E.R. Pickett, M.A. Wistey, and J.S. Harris, "Strong Luminescence Enhancement in GaInNAsSb Quantum Wells Through Variation of the Group-V Fluxes," 48th Electronic Materials Conference (EMC), University Park, PA, June 2006.

17. S.R. Bank, H.P. Bae, L.L. Goddard, H.B. Yuen, M.A. Wistey, and J.S. Harris, "Very Low-Threshold 1.55-μm Dilute-Nitride Lasers," 64th Device Research Conference (DRC), University Park, PA, June 2006.

18. (Invited) S.R. Bank, "Low-threshold 1.55-μm GaInNAsSb lasers on GaAs," Rank Prize Funds Symposium, Windermere, UK, June 2006. (Received a Student Paper Award)

19. S.R. Bank, H.P. Bae, H.B. Yuen, L.L. Goddard, M.A. Wistey, and J.S. Harris, "MBE Growth of Very Low-Threshold 1.55-μm GaAs-Based Lasers," to be presented at the 14th International Conference on Molecular Beam Epitaxy, Tokyo, Japan, September 2006.

(Mostly) Complete Publication List (updated 8/7/05)


Personal Information


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*This James Harris, not this one or this one...