Tomas Sarmiento

Research Interests

I am interested in the molecular beam epitaxial growth, fabrication and testing of dilute nitride optoelectronic devices. Currently, I am working on the improvement of 1550nm GaInNAsSb/GaAs lasers and on the realization of room-temperature CW 1550nm GaInNAsSb/GaAs vertical-cavity surface-emitting lasers.

Publications

• G. Shambat, S. R. Khotapalli, J Provine, T. Sarmiento, J. S. Harris, S. S. Gambhir, and J. Vuckovic, "Single-cell photonic nanocavity probes", Nano Lett., 2013.
• J. W. Schwede, T. Sarmiento, V. K.Narasimhan, S. J. Rosenthal, D. C. Riley, F. Schmitt, I. Bargatin, K. Shasrabuddhe, R. T. Howe, J. S. Harris, N. A. Melosh, and Z. -X. Shen, "Photon-enhanced thermionic emission from heterostructures with low interface recombination", Nature Communications 4, 1576, 2013.
• M. Baranoswki, R. Kudrawiec, M. Latkowska, M. Syperek, J. Misiewicz, T. Sarmiento, and J. S. Harris, "Enhancement of photoluminescence from GaInNAsSb quantum wells upon annealing: improvement of material quality and carrier collection by the quantum well", J. Phys.: Condens. Matter. 25, 065801, 2013.
• G. Shambat, B. Ellis, J. Petykiewicz, M. A. Meyer, A. Majumdar, T. Sarmiento, J. S. Harris, E. E. Haller and J. Vuckovic, "Electrically driven photonic crystal nanocavity devices", IEEE J. Sel. Topics Quantum Electron. 18, 1700, 2012.
• K. C. Y. Huang, M.-K. Seo, Y. Huo, T. Sarmiento, J. S. Harris, and M. L. Brongersma, "Antenna electrodes for controlling electroluminescence", Nature Communications 3, 1005, 2012.
• G. Shambat, S. R. Khotapalli, A. Khurana, J Provine, T. Sarmiento, K. Cheng, Z. Cheng, J. S. Harris, H. Daldrup-Link, S. S. Gambhir, and J. Vuckovic, "A photonic crystal cavity-optical fiber tip nanoparticle sensor for biomedical applications", Appl. Phys. Lett. 100, 213702, 2012.
• G. Shambat, B. Ellis, A. Majumdar, J. Petykiewicz, M. A. Meyer, T. Sarmiento, J. S. Harris, E. E. Haller and J. Vuckovic, "Ultrafast direct modulation of a single-mode photonic crystal nanocavity light-emitting diode", Nature Communications 2, 539, 2011.
• G. Shambat, J Provine, K. Rivoire, T. Sarmiento, J. S. Harris,and J. Vuckovic, "Optical fiber tips functionalized with semiconductor photonic crystal cavities", Appl. Phys. Lett. 99, 191102, 2011.
• G. Shambat, B. Ellis, J. Petykiewicz, M. A. Meyer, T. Sarmiento, J. S. Harris, E. E. Haller and J. Vuckovic, "Nanobeam photonic crystal cavity ligth-emitting diodes", Appl. Phys. Lett. 99, 071105, 2011.
• J. W. Ferguson, P. Blood, P. M. Smowton, H. Bae, T. Sarmiento, J. S. Harris, N. Tansu and L. J. Mawst, "Optical gain in GaInNAs and GaInNAsSb quantum wells", IEEE J. Quantum Electron. 47, 870, 2011.
• B. Ellis, M. A. Mayer, G. Shambat, T. Sarmiento, J. S. Harris, E. E. Haller, and J. Vuckovic, "Ultralow-threshold electrically pumped quantum dot photonic crystal nanocavity laser", Nature Photonics 5, 297, 2011.
• J. S. Harris, T. D. O'Sullivan, T. Sarmiento, M. M. Lee and S. Vo, "Emerging applications of vertical cavity surface emitting lasers", Semicond. Sci. Technol. 26, 014010, 2011.
• B. Ellis, T. Sarmiento, M. Mayer, B. Zhang, J. S. Harris, E. Haller, and J. Vuckovic, "Electrically pumped photonic crystal nanocavity light sources using a laterally doped p-i-n junction", Appl. Phys. Lett. 96, 181103, 2010.
• Y. Gong, B. Ellis, G. Shambat, T. Sarmiento, J. S. Harris and J. Vuckovic, "Nanobeam photonic crystal quantum dot laser", Opt. Express 18, 8781, 2010.
• R. Kudrawiec, T. Sarmiento, P. Poloczek, J. Misiewicz, and J. S. Harris, "Photoreflectance and photoluminescence study of GaInNAsSb layers lattice matched to InP", J. Appl. Phys. 107, 043523, 2010.
• J. W. Ferguson, P. M. Smowton, P. Blood, H. Bae, T. Sarmiento, and J. S. Harris, "Nonradiative recombination in 1.56 μm GaInNAsSb/GaNAs quantum-well lasers", Appl. Phys. Lett. 95, 231104, 2009.
• T. Sarmiento, H. P. Bae, T. D. O'Sullivan, and J. S. Harris, "GaAs-based 1.53 μm GaInNAsSb vertical cavity surface emitting lasers", Electron. Lett. 45, 978, 2009.
• D. Englund, B. Ellis, E. Edwards, T. Sarmiento, J. S. Harris, D. A. B. Miller, and J. Vuckovic, "Electrically controlled modulation in a photonic crystal nanocavity", Opt. Express 17, 15409, 2009.
• R. Kudrawiec, P. Poloczek, J. Misiewicz, H. P. Bae, T. Sarmiento, S. R. Bank, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1.5-1.65 μm: Broadening of the fundamental transition", Appl. Phys. Lett. 94, 031903, 2009.
• J. S. Harris, R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, D. Jackrel, E. R. Pickett, T. Sarmiento, L. L. Goddard, V. Lordi and T, Gugov, "Development of GaInNAsSb Alloys: Growth, band structures, optical properties and applications", Phys. Stat. Sol. (b) 244, 2707, 2007.
• H. P. Bae, S. R. Bank, H. B. Yuen, T. Sarmiento, E. R. Pickett, M. A. Wistey, and J. S. Harris, "Temperature dependencies of annealing behaviors of GaInNAsSb/GaNAs quantum wells for long wavelength dilute-nitride lasers", Appl. Phys. Lett. 90, 231119, 2007.

Selected Presentations

• T. Sarmiento, and J. S. Harris, "GaInNAsSb quantum wells with strain-compensating GaAsP layers for GaAs-based 1.55 μm lasers", Electronic Materials Conf. (EMC), Santa Barbara, CA, June 2011.
• T. Sarmiento, R. Kudrawiec, P. Poloczek, J. Misiewicz, A. Moto, and J. S. Harris, "Growth and characterization of lattice-matched GaInNAsSb layers on InP for mid-infrared applications", Int. Symp. on Compound Semiconductors (ISCS), Santa Barbara, CA, Aug. 2009.
• T. Sarmiento, H. P. Bae, T. D. O'Sullivan, and J. S. Harris, "Molecular beam epitaxial growth of GaAs-based 1.53 μm GaInNAsSb vertical cavity surface emitting lasers", North American Molecular Beam Epitaxy Conf. (NAMBE), Princeton, NJ, Aug. 2009.
• T. Sarmiento, H. P. Bae, T. D. O'Sullivan, and J. S. Harris, "1528 nm GaInNAsSb/GaAs vertical cavity surface emitting lasers", Conf. on Lasers and Electro Optics (CLEO), Baltimore, MD, June 2009.
• H. P. Bae, T. Sarmiento, and J. S. Harris, "Experimental investigation of temperature dependence of 1.55 μm GaInNAsSb/GaNAs QW lasers grown by MBE", Int. Semiconductor Laser Conf. (ISLC), Sorrento, Italy, Sep. 2008.
• H. P. Bae, T. Sarmiento, and J. S. Harris, "Vast improvement of 1.55 μm GaInNAsSb quantum well quality", Electronic Materials Conf. (EMC), Santa Barbara, CA, June 2008.

Personal Information

• Education
  • Stanford University, Stanford, CA
    • Ph.D. Candidate, Electrical Engineering
    • Gerald L. Pearson Memorial Fellowship
  • Georgia Institute of Technology, Atlanta, GA
    • M.S. in Electrical Engineering, 2003
    • Fulbright Fellowship
    • Georgia Tech Tower Award
  • Universidad de Los Andes, Bogota, Colombia
    • B.S. in Electrical Engineering, 1998

• Interests and Activities
  • President, Colombian Student Association, 2005-2007

• Where to find me:
  • Office: CIS-X, Room B126X
  • Phone: 650-725-8313
  • MBE Lab:650-723-4766
  • Optics Lab: 650-733-2562
  • Fax: 650-723-4659
  • E-Mail: tsarmie at stanford dot edu