Welcome to Xin Jiang's Homepage
Resume
Xin Jiang
Education:
PhD candidate Applied Physics Stanford University, 9/1998-present
BS Physics Tsinghua University, Beijing, China, 6/1998
BS Automatic Control Tsinghua University, Beijing, China, 6/1998
Research Assistant Stanford University, 9/1998-present
Studied spin-dependent hot electron transport
in magnetic tunnel transistors. Fabricated
and optimized magnetic tunnel transistors by growing metal and oxide thin
films on semiconductor substrates. Conducted electrical measurements to characterize device
properties and to investigate the influence of scattering processes in the
metals and at the metal/metal or metal/semiconductor interfaces, and the
influence of the semiconductor electronic structure on the electron
transport. Interpreted the
experiments through model calculations.
Demonstrated huge magnetocurrent effect of more than 3400%.
Demonstrated high spin injection efficiency from ferromagnetic
metal/tunnel barrier injectors into GaAs quantum well structures.
Conducted spin-polarized electroluminescence experiments in a
superconducting magnet cryostat. Studied the temperature and bias dependence of the spin
polarization and understood the spin relaxation mechanisms in the
semiconductor.
Magnetron
sputtering, ion beam sputtering, evaporation.
Electrical
transport measurements, wire bonding, electroluminescence measurements.
superconducting quantum interference device (SQUID) magnetometer,
profilometer.
Vacuum systems,
cryostats, experiment automation, hardware/software interfacing.
LabView, Matlab,
Mathematica, C, Fortune.
Honors:
Stanford Graduate
Fellowship
Stanford University, 1998-2001
BS in Physics
with honor
Tsinghua University, 1998
Ye Qi-Sun
Fellowship
Tsinghua University, 1997
Dong Shi
Oriental Fellowship
Tsinghua University, 1996
First-Prize in
Challenge Cup Contest
Tsinghua University, 1996
First-class Scholarship
Tsinghua University, 1995
Third-class Scholarship
Tsinghua University, 1994
X.
Jiang, S. van Dijken, R. Wang, and S. S. P. Parkin, Bias Voltage
Dependence of Magnetocurrent in Magnetic Tunnel Transistors, Phys.
Rev. B, (accepted).
X.
Jiang, R. Wang, S. van Dijken, R. Shelby, R. Macfarlane, G. Solomon, J.
Harris, and S. S. P. Parkin, Optical
Detection of Hot-Electron Spin Injection into GaAs from a Magnetic Tunnel
Transistor Source, Phys. Rev. Lett. 90, 256603 (2003)*.
S. van Dijken, X. Jiang, and S. S. P. Parkin,
Non-Monotonic Bias Voltage Dependence of the Magneto-Collector Current
in GaAs-Based Magnetic Tunnel Transistors, Phys. Rev. Lett. 90,
197203 (2003)*.
S. S. P. Parkin, X. Jiang, C. Kaiser, A.
Panchula, K. Roche, and M. Samant, Magnetically Engineered Spintronic
Sensors and Memory, Proc. IEEE 91, 661 (2003).
S. van Dijken, X. Jiang, and S. S. P. Parkin, Giant
Magnetocurrent Exceeding 3400% in Magnetic Tunnel Transistors with
Spin-Valve Base Layers, Appl. Phys. Lett. 83, 951 (2003)*.
S. van Dijken, X. Jiang, and S. S. P. Parkin,
Comparison
of magnetocurrent and transfer ratio in magnetic tunnel transistors with
spin-valve bases containing Cu and Au spacer layers,
Appl. Phys. Lett. 82, 775 (2003)*.
S. van Dijken, X. Jiang, and S. S. P. Parkin,
Spin-Dependent Hot Electron Transport in NiFe and CoFe Films on GaAs
(001), Phys. Rev. B, 66, 094417 (2002)*.
S.
van Dijken, X. Jiang, and S. S. P. Parkin, Room Temperature
Operation of a High Output Magnetic Tunnel Transistor, Appl. Phys.
Lett. 80, 3364 (2002).
X.
Jiang,
A. F. Panchula, and S. S. P. Parkin, Magnetic Tunnel Junctions with
ZnSe Barriers, submitted.
X. Jiang, R. Shelby, R. Wang, R. Macfarlane, S. Bank, G.
Solomon, J. Harris, and S. S. P. Parkin, Enhanced Spin Injection into
GaAs from a Ferromagnetic Metal/Tunnel
Barrier Injector, to be submitted.
S.
van Dijken, X. Jiang, and S. S. P. Parkin, Influence of
Nonmagnetic Seed Layers on the Magnetoelectronic Properties of Magnetic
Tunnel Transistors with a Silicon Collector, to be submitted.
*Also
selected for the Virtual Journal of Nanoscale Science & Technology.