H. Lee, D. B. Oberman and J. S. Harris, "Reactive ion etching of gallium nitride films," 37th Electronic Materials Conference. III-V Nitrides and Silicon Carbide, 1995, Charlottesville, VA, USA, 25(5), 835-7 (1996). [more info] H. Lee, M. Yuri, T. Ueda and J. S. Harris, Jr., "Thermodynamic analysis and growth characterization of thick GaN films grown by chloride VPE using GaCl3/N2 and NH3/N2," Materials Research Society symposia proceedings, 423, 233-238 (1996). [more info] J. Martin, B. A. Paldus, P. Zalicki, E. H. Wahl, T. G. Owano, J. S. Harris, C. H. Kruger and R. N. Zare, "Cavity ring-down spectroscopy with Fourier-transform-limited light pulses," Chemical Physics Letters, 258(1), 63-70 (1996). [more info] A. Massengale, M. C. Larson, C. Dai and J. S. Harris, "Collector-up AlGaAs/GaAs heterojunction bipolar transistors using oxidised AlAs for current confinement," Electronics Letters, 32(4), 399-401 (1996). [more info] K. Matsumoto, M. Ishii, K. Segawa, Y. Oka, B. J. Vartanian and J. S. Harris, "Room temperature operation of a single electron transistor made by the scanning tunneling microscope nanooxidation process for the TiO{sub x}/Ti system," Applied Physics Letters, 68(1), 34-6 (1996). [more info] Y. Okada and J. S. Harris, "Basic analysis of atomic-scale growth mechanisms for molecular beam epitaxy of GaAs using atomic hydrogen as a surfactant," Journal of Vacuum Science & Technology B, 14(3), 1725-1728 (1996). [more info] Y. Okada, J. S. Harris and W. Gotz, "Deep level defects in GaAs on Si substrates grown by atomic hydrogen-assisted molecular beam epitaxy," Journal of Applied Physics, 80(8), 4770-4772 (1996). [more info] G. Pilling, D. H. Cobden, P. L. McEuen, C. I. Duruoz and J. S. Harris, "Intrinsic bistability in nonlinear transport through a submicron lateral barrier," Surface Science, 362(1-3), 652-655 (1996). [more info] J. S. Powell, "Vertical-cavity X-modulators for WDM," (1996). [more info] J. S. Powell, J. A. Trezza, M. Morf and J. S. Harris, "Vertical-cavity X-modulators for WDM," Proceedings of SPIE--the international society for optical engineering, 2690, 207-216 (1996). [more info]
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