D. R. Stewart, D. Sprinzak, C. M. Marcus, C. I. Duruoz and J. S. Harris, "Correlations between ground and excited state spectra of a quantum dot," Science, 278(5344), 1784-8 (1997). [more info] D. R. Stewart, D. Sprinzak, C. M. Marcus, C. I. Durušz and J. J. S. Harris, "Correlations between Ground and Excited State Spectra of a Quantum Dot," , Proc. Twelfth International Conference on the Electronic Properties of Two-Dimensional Systems, Tokyo, Japan (1997). [more info] F. Sugihwo, M. Larson and J. S. H. Jr, "Monolithically Micromachined Wavelength Tunable Vertical Cavity Lasers," , Proc. SOTAPOCS XXVII, Paris, France (1997). [more info] F. Sugihwo, M. C. Larson and J. S. Harris, "Low threshold continuously tunable vertical-cavity surface-emitting lasers with 19.1 nm wavelength range," Applied Physics Letters, 70(5), 547-9 (1997). [more info] F. Sugihwo, M. C. Larson and J. S. Harris, "Whispering gallery mode operation in airgap vertical cavity laser structure," Electronics Letters, 33(17), 1467-8 (1997). [more info] F. Sugihwo, M. C. Larson and J. S. H. Jr., "30nm Wavelength Tunable Vertical Cavity Lasers," , Proc. International Solid State Devices and Materials Conf, Hamamatsu, Japan (1997). [more info] F. Sugihwo, C.-C. Lin, M. Larson and J. S. H. Jr., "Electromechanical Tuning of Lasing Wavelength of Vertical Cavity Lasers," , 44th. American Vacuum Society National Symposium, San Jose, CA (1997). [more info] B. Sung, H. C. Chui, M. M. Fejer and J. S. Harris, "Near-infrared wavelength intersubband transitions in high indium content InGaAs/AlAs quantum wells grown on GaAs," Electronics Letters, 33(9), 818-20 (1997). [more info] J. A. Trezza, J. S. Powell and J. S. Harris, "Zero chirp asymmetric Fabry-Perot electroabsorption modulator using coupled quantum wells," IEEE Photonics Technology Letters, 9(3), 330-2 (1997). [more info] K. L. Vodopyanov, V. Chazapis, C. C. Phillips, B. Sung and J. S. Harris, "Intersubband absorption saturation study of narrow III-V multiple quantum wells in the lambda =2.8-9 mu m spectral range," Semiconductor Science and Technology, 12(6), 708-14 (1997). [more info]
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