W. S. Fu, G. R. Olbright, J. F. Klem and J. S. Harris, "Optical gain and ultrafast nonlinear response in GaAs/AlAs type-II quantum wells," Applied Physics Letters, 61(14), 1661-3 (1992). [more info] H. Ito and J. S. Harris, "InGaAs double heterojunction bipolar transistors grown on GaAs substrates," Electronics Letters, 28(7), 655-6 (1992). [more info] H. Ito, O. Nakajima, T. Furuta and J. S. Harris, "Influence of dislocations on the DC characteristics of AlGaAs/GaAs heterojunction bipolar transistors," IEEE Electron Device Letters, 13(5), 232-4 (1992). [more info] S. D. Kim and J. S. Harris, "Stacking Fault Stability in GaAs/Si Hetero-epitaxial Growth," Journal of Crystal Growth, 123(3-4), 439-444 (1992). [more info] W. Liu, "Ideality factor of extrinsic base surface recombination current inAlGaAs/GaAs heterojunction bipolar transistors," Electronics Letters, 28(4), 379-380 (1992). [more info] W. Liu, "Current gain of graded AlGaAs/GaAs heterojunction bipolartransistors with and without a base quasi-electric field," IEEE Transactions on Electron Devices, 39(11), 2422 (1992). [more info] W. Liu, D. Costa and J. S. Harris, "Derivation of the emitter-collector transit time of heterojunction bipolar transistors," Solid-State Electronics, 35(4), 541-5 (1992). [more info] W. Liu, D. Costa and J. S. Harris, "A simplified model for the distributed base contact impedance in heterojunction bipolar transistors," Solid-State Electronics, 35(4), 547-52 (1992). [more info] W. Liu, D. Costa and J. S. Harris, "Derivation of the emitter-collector transit time of heterojunction bipolar transistors," Solid State Electronics, 35, 541-545 (1992). [more info] W. Liu, C. Dai and J. S. Harris, "An advantage of Pnp over Npn AlGaAs/GaAs Heterojunction Bipolar Transistors for Microwave Power Application," Japanese Journal of Applied Physics, 31(L452-4) (1992). [more info]
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