J. A. Trezza, J. S. Harris, Jr., "Efficient Quantum Well Optoelectronic Modulators," Naval Research Laboratory, Washington, DC (1994). [more info] B. Vartanian, J. S. Harris, Jr., "Normal Incidence Absorption in P-type InGaAs/AlGaAs Quantum Wells," Electrotechnical Laboratory, Tsukuba, Japan (1994). [more info] B. Vartanian, J. S. Harris, Jr., "Normal Incidence Absorption in P-type InGaAs/AlGaAs Quantum Wells," Tokyo University, Tokyo, Japan (1994). [more info] B. Vartanian, J. S. Harris, Jr., "Normal Incidence Absorption in P-type InGaAs/AlGaAs Quantum Wells," Toshiba,, Kawasaki, Japan (1994). [more info] J. S. Harris, Jr., "Recent Developments in MBE Growth of GaN," NTT (1994). [more info] J. S. Harris, Jr., "Development of Sub-micron Emitter AlGaAs/GaAs Heterojunction Bipolar Transistors for High Frequency and Low Power Applications," NTT (1994). [more info] J. S. Harris, Jr., "Development of Sub-micron Emitter AlGaAs/GaAs Heterojunction Bipolar Transistors for High Frequency and Low Power Applications," Fujitsu (1994). [more info] J. S. Harris, Jr., "Recent Developments in MBE Growth of GaN," Toshiba Corp., August, 1994. (1994). [more info] J. S. Harris, Jr., "Development of Sub-micron Emitter AlGaAs/GaAs Heterojunction Bipolar Transistors for High Frequency and Low Power Applications," Toshiba Corp., August, 1994. (1994). [more info] J. S. Harris, Jr., "Recent Developments in MBE Growth of GaN," NEC (1994). [more info]
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