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  • J. S. Harris, Jr., "Development of Sub-micron Emitter AlGaAs/GaAs Heterojunction Bipolar Transistors for High Frequency and Low Power Applications," NEC (1994). [more info]

  • J. S. Harris, Jr., "Recent Developments in MBE Growth of GaN," Nichia (1994). [more info]

  • H. C. Chui, G. L. Woods, E. L. Martinet, M. M. Fejer, J. S. Harris, Jr., "Mid-Infrared Light Generation in High Indium Content InGaAs/AlGaAs Quantum Wells," 1st International Free Electron UserÕs Workshop, Stanford, CA (1994). [more info]

  • G. L. Woods, E. L. Martinet, H. C. Chui, M. M. Fejer, J. S. Harris, Jr., "CO2 and Free Electron Laser Mid-Infrared Nonlinear Spectroscopy of Doubly Resonant InGaAs/AlGaAs Quantum Wells," 1st International Free Electron UserÕs Workshop, Stanford, CA (1994). [more info]

  • Zhiping Yu, James S. Harris, Jr., "Numerical Analysis of Single and Double-doped InP-based Heterojunction FET Characteristics," Japan Society of Applied Physics, Yokohama, Japan (1994). [more info]

  • J. S. Harris, Jr., "Development of Sub-micron Emitter AlGaAs/GaAs Heterojunction Bipolar Transistors for High Frequency and Low Power Applications Mitsubishi,," Mitsubishi,, August, 1994. (1994). [more info]

  • J. S. Harris, Jr., "Application of Deep Quantum Well Structures to DFG of Mid IR Lasers," Electrotechnical Laboratory, Japan (1994). [more info]

  • J. S. Harris, Jr., "Recent Developments in MBE Growth of GaN," Electrotechnical Laboratory, Japan (1994). [more info]

  • J. S. Harris, Jr., "Recent Developments in MBE Growth of GaN," Optoelectronics Technology Lab in Japan, Japan (1994). [more info]

  • J. S. Harris, Jr., "Application of Deep Quantum Well Structures to DFG of Mid IR Lasers," Yokogawa Electric, Japan (1994). [more info]

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