L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, M. M. Fejer, L. Becouarn, B. Gerard and E. Lallier, "All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion," Applied Physics Letters, 79(7), 904-6 (2001). [more info] J. A. Folk, C. M. Marcus and J. S. Harris, "Decoherence in nearly isolated quantum dots," Physical Review Letters, 87(20), 206802-4 (2001). [more info] J. A. Folk, S. R. Patel, K. M. Birnbaum, C. M. Marcus, C. I. Duruoz and J. S. Harris, "Spin degeneracy and conductance fluctuations in open quantum dots," Physical Review Letters, 86(10), 2102-5 (2001). [more info] V. Gambin, W. Ha, M. Wistey, S. Kim and J. S. Harris, "GaInNAs Material Properties for Long Wavelength Opto-Electronic Devices," , Proc. MRS Conf. Progress in Semiconductor Materials for Optoelectronic Applications, Boston, MA (2001). [more info] W. Ha, W. Ha, V. Gambin, M. Wistey, S. A. B. S. Bank, A. S. K. Seongsin Kim and J. A. H. J. Harris, "Long wavelength GaInNAs ridge waveguide lasers with GaNAs barriers," , Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE (2001). [more info] J. S. Harris, "GaInNAs, a new material for long wavelength VCSELs," 10th Seoul International Symposium on the Physics of Semiconductors and Applications - 2000, 1-3 Nov. 2000, Cheju, South Korea, 39, S306-S312 (2001). [more info] T. I. Kamins, R. S. Williams, D. P. Basile, T. Hesjedal and J. S. Harris, "Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms," Journal of Applied Physics, 89(2), 1008-16 (2001). [more info] P. Krispin, S. G. Spruytte, J. S. Harris and K. H. Ploog, "Admittance dispersion of n-type GaAs/Ga(As, N)/GaAs heterostructures grown by molecular beam epitaxy," Journal of Applied Physics, 90(5), 2405-10 (2001). [more info] P. Krispin, S. G. Spruytte, J. S. Harris and K. H. Ploog, "Deep-level defects in MBE-grown Ga(As,N) layers," 21st International Conference on Defects in Semiconductors. ICDS-21, 16-20 July 2001, Giessen, Germany, 308/310, 870-3 (2001). [more info] P. Krispin, S. G. Spruytte, J. S. Harris and K. H. Ploog, "Origin and annealing of deep-level defects in p-type GaAs/Ga(As,N)/GaAs heterostructures grown by molecular beam epitaxy," Journal of Applied Physics, 89(11), 6294-2 (2001). [more info]
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