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  • B. Pezeshki, R. B. Apte, S. M. Lord and J. S. Harris, "Quantum well modulators for optical beam steering applications," IEEE Photonics Technology Letters, 3(9), 790-2 (1991). [more info]

  • B. Pezeshki, S. M. Lord and J. S. Harris, "Electroabsorption modulators in InGaAs/AlGaAs," Applied Physics Letters, 59(8), 888-90 (1991). [more info]

  • B. Pezeshki, S. M. Lord and J. S. Harris, "Electro-Absorption in InGaAs/AlGaAs Quantum Wells," , Proc. 18th International Symposium on GaAs and Related Compounds, Seattle, WA (1991). [more info]

  • B. Pezeshki, D. Thomas and J. S. Harris, "Novel cavity design for high reflectivity changes in a normally off electroabsorption modulator," Applied Physics Letters, 58(8), 813-15 (1991). [more info]

  • P. Pezeshki, S. M. Lord, T. B. Boykin, B. L. Shoop and J. S. Harris, "AlGaAs/AlAs QW modulator for 6328 AA operation," Electronics Letters, 27(21), 1971-3 (1991). [more info]

  • J. J. L. Rascol, K. P. Martin, R. E. Carnahan, R. J. Higgins, L. Cury, J. C. Portal, B. G. Park, E. Wolak, K. L. Lear and J. S. Harris, "Ballistic electron contributions in vertically integrated resonant tunneling diodes," Superlattices and Microstructures, 10(2), 175-8 (1991). [more info]

  • J. J. L. Rascol, K. P. Martin, R. E. Carnahan, R. J. Higgins, L. A. Cury, J. C. Portal, B. G. Park, E. Wolak, K. L. Lear and J. S. Harris, "Influence of ballistic electrons on the device characteristics of vertically integrated resonant tunneling diodes," Applied Physics Letters, 58(14), 1482-4 (1991). [more info]

  • G. Roos, N. M. Johnson, C. Herring and J. S. Harris, "Thermal dissociation energy of the Si-H complex in n-type GaAs," Applied Physics Letters, 59(4), 461-3 (1991). [more info]

  • D. Thomas, B. Pezeshki and J. S. H. Jr., "Reflection Electro-Absorption Modulator with High Reflectivity Change in a Novel Normally-Off Configuration," , Proc. Quantum Optoelectronics, Salt Lake City, UT (1991). [more info]

  • C. W. Tu and J. S. Harris, "PROCEEDINGS OF THE 6TH INTERNATIONAL-CONFERENCE ON MOLECULAR-BEAM EPITAXY LA-JOLLA, CA, USA, 27-31 AUGUST 1990 - PREFACE," Journal of Crystal Growth, 111(1-4), R9-R9 (1991). [more info]

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