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  • J. S. Harris, Jr., "of Sub-micron Emitter AlGaAs/GaAs Heterojunction Bipolar Transistors for High Frequency and Low Power Applications," Yokogawa Electric, Japan (1994). [more info]

  • J. S. Harris, Jr., "Recent Developments in MBE Growth of GaN," Sony in Japan, Japan (1994). [more info]

  • J. S. Harris, Jr., "of Sub-micron Emitter AlGaAs/GaAs Heterojunction Bipolar Transistors for High Frequency and Low Power Applications," Sony in Japan, Japan (1994). [more info]

  • D. J. Bone, H. Lee, K. Williams, J. S. Harris, Jr. and R. F. W. Pease, "Characterization of In-Situ Variable-Energy Focused Ion Beam/MBE MQW Structures," Symposium on Compound Semiconductors, San Diego, CA (1994). [more info]

  • D. B. Oberman, H. Lee, W. K. Gštz, J. S. Harris, Jr., "MBE Growth of GaN with ECR Plasma and Hydrogen Azide," Symposium on Compound Semiconductors, San Diego, CA (1994). [more info]

  • H. Lee, D. B. Oberman, W. Gštz and J. S. Harris, Jr., "Heteroepitaxial Growth of GaN on GaAs by ECR Plasma Assisted MBE," Symposium on Compound Semiconductors, San Diego, CA (1994). [more info]

  • J. S. Harris, Jr., "Graded Structures and Their Application to Optical Devices," International Workshop on Metastable and Strained Semiconductor Structures, Tsukuba, Japan (1994). [more info]

  • H. C. Chui, G. L. Woods, M. M. Fejer, E. L. Martinet, J. S. Harris, Jr., "Tunable Mid-Infrared Generation by Mixing of Near-Infrared wavelengths in Intersubband Quantum Wells," Meeting of the Lasers and Electro-Optics Society (LEOS), Boston, MA (1994). [more info]

  • D. B. Oberman, J. S. Harris, Jr., "MBE Growth of GaN with ECR Plasma and Hydrogen Azide," North American Conference on Molecular Beam Epitaxy, Champaign-Urbana, IL (1994). [more info]

  • J. S. Harris, Jr., "Application of Deep Quantum Well Structures to DFG of Mid IR Lasers," University of Tokyo, Japan (1994). [more info]

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