S. G. Spruytte, C. W. Coldren, J. S. Harris, W. Wampler, P. Krispin, K. Ploog and M. C. Larson, "Incorporation of nitrogen in nitride-arsenides: Origin of improved luminescence efficiency after anneal," Journal of Applied Physics, 89(8), 4401-6 (2001). [more info] S. G. Spruytte, M. C. Larson, W. Wampler, C. W. Coldren, H. E. Petersen and J. S. Harris, "Nitrogen incorporation in group III-nitride-arsenide materials grown by elemental source molecular beam epitaxy," 11th International Conference on Molecular Beam Epitaxy; Sep 11-15 2000; Bijing, China, 227/228, 506-15 (2001). [more info] S. G. Spruytte, M. A. Wistey, M. C. Larson, C. W. Coldren, H. E. Garrett and J. J. S. Harris, "1.3-mu m optoelectronic devices on GaAs using group III-nitride-arsenides," , Vertical-Cavity Surface-Emitting Lasers V, San Jose, CA, USA (2001). [more info] T. Takayama, M. Yuri, K. Itoh, T. Baba and J. S. Harris, "Analysis of phase-separation region in wurtzite group III nitride quaternary material system using modified valence force field model," Journal of Crystal Growth, 222(1), 29-37 (2001). [more info] T. Takayama, M. Yuri, K. Itoh and J. S. Harris, "Theoretical predictions of unstable two-phase regions in wurtzite group-III-nitride-based ternary and quaternary material systems using modified valence force field model," Journal of Applied Physics, 90(5), 2358-69 (2001). [more info] R. Urata, R. Takahashi, V. A. Sabnis, D. A. B. Miller and J. S. Harris, "Ultrafast differential sample and hold using low-temperature-grown GaAs MSM for photonic A/D conversion," IEEE Photonics Technology Letters, 13(7), 717-19 (2001). [more info] R. Urata, R. Takahashi, V. A. Sabnis, D. A. B. A. M. D. A. B. Miller and J. S. A. H. J. S. Harris, "High-speed sample and hold using low temperature grown GaAs MSM switches for photonic A/D conversion," (2001). [more info]
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