R. E. Carnahan, K. P. Martin, R. J. Higgins, B. G. Park, E. Wolak, K. L. Lear and J. S. Harris, "GAMMA-X INTERVALLEY TUNNELING IN A GAAS ALAS RESONANT-TUNNELING DIODE UNDER UNIAXIAL-STRESS," Semiconductor Science and Technology, 9(5), 500-503 (1994). [more info] H. C. Chiu, E. L. Martinet, M. M. Fejer and J. S. H. Jr., "Large Energy Intersubband Transitions in High Indium Content InGaAs/AlGaAs Quantum Wells," (1994). [more info] H. C. Chui and J. S. Harris, "Growth studies on In{sub 0.5}Ga{sub 0.5}As/AlGaAs quantum wells grown on GaAs with a linearly graded InGaAs buffer," 13th North American Molecular-Beam Epitaxy Conference, 13-15 Sept. 1993, Stanford, CA, USA, 12(2), 1019-22 (1994). [more info] H. C. Chui and J. S. Harris, "GROWTH-STUDIES ON IN0.5GA0.5AS/ALGAAS QUANTUM-WELLS GROWN ON GAAS WITH A LINEARLY GRADED INGAAS BUFFER," Journal of Vacuum Science & Technology B, 12(2), 1019-1022 (1994). [more info] H. C. Chui, E. L. Martinet, M. M. Fejer and J. S. Harris, "Short wavelength intersubband transitions in InGaAs/AlGaAs quantum wells grown on GaAs," Applied Physics Letters, 64(6), 736-8 (1994). [more info] H. C. Chui, E. L. Martinet, G. L. Woods, M. M. Fejer, J. S. Harris, C. A. Rella, B. I. Richman and H. A. Schwettman, "DOUBLY RESONANT 2ND-HARMONIC GENERATION OF 2.0 MU-M LIGHT IN COUPLED INGAAS ALAS QUANTUM-WELLS," Applied Physics Letters, 64(25), 3365-3367 (1994). [more info] M. S. Goorsky, J. W. Eldredge, S. M. Lord and J. S. Harris, "STRUCTURAL-PROPERTIES OF HIGHLY MISMATCHED INGAAS-BASED DEVICES GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS SUBSTRATES," Journal of Vacuum Science & Technology B, 12(2), 1034-1037 (1994). [more info] M. S. Goorsky, J. W. Eldredge, S. M. Lord and J. S. Harris, "Structural properties of highly mismatched InGaAs-based devices grown by molecular beam epitaxy on GaAs substrates," 13th North American Molecular-Beam Epitaxy Conference, 13-15 Sept. 1993, Stanford, CA, USA, 12(2), 1034-7 (1994). [more info] H. Ito and J. S. Harris, "Influence of dislocations on the threshold current density of AlGaAs/GaAs/InGaAs strained quantum-well lasers," Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), 33(12), 6516-17 (1994). [more info] S. D. Kim, H. Lee and J. S. Harris, "Molecular beam epitaxial growth of In{sub 0.65}Ga{sub 0.35}As quantum wells on GaAs substrates for 1.5 {mu}m exciton resonance," Journal of Crystal Growth, 141(1-2), 37-43 (1994). [more info]
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