W. Liu and J. S. Harris, "Critical passivation ledge thickness in AlGaAs/GaAs heterojunction bipolar transistors," Journal of Vacuum Science & Technology B (Microelectronics Processing and Phenomena), 11(1), 6-9 (1993). [more info] R. Lodenkamper, M. L. Bortz, M. M. Fejer, K. Bacher and J. S. Harris, "SURFACE-EMITTING 2ND-HARMONIC GENERATION IN A SEMICONDUCTOR VERTICAL RESONATOR," Optics Letters, 18(21), 1798-1800 (1993). [more info] S. M. Lord, B. Pezeshki and J. S. Harris, "ELECTROABSORPTION MODULATORS OPERATING AT 1.3-MU ON GAAS SUBSTRATES," Optical and Quantum Electronics, 25(12), S953-S964 (1993). [more info] S. M. Lord, B. Pezeshki, S. D. Kim and J. S. Harris, "1.3 mu m exciton resonances in InGaAs quantum wells grown by molecular beam epitaxy using a slowly graded buffer layer," Proceedings of the 7th International Conference on Molecular Beam Epitaxy - MBE-VII; Aug 24-28 1992; Schwaebisch Gmuend, Ger, 127(1), 759-64 (1993). [more info] S. M. Lord, G. Roos, J. S. Harris and N. M. Johnson, "Hydrogen passivation of nonradiative defects in InGaAs/Al{sub x}Ga{sub 1-x}As quantum wells," Journal of Applied Physics, 73(2), 740-8 (1993). [more info] S. M. Lord, J. A. Trezza, M. C. Larson, B. Pezeshki and J. S. Harris, "1.3 mu m electroabsorption reflection modulators on GaAs," Applied Physics Letters, 63(6), 806-8 (1993). [more info] J. D. Morse, R. P. Mariella, J. W. Adkisson, G. D. Anderson, J. S. Harris and R. W. Dutton, "Picosecond photoconductivity in polycrystalline gallium arsenide grown by molecular beam epitaxy," Applied Physics Letters, 62(12), 1382-4 (1993). [more info] G. N. Nasserbakht, J. W. Adkisson, B. A. Wooley, J. S. Harris and T. I. Kamins, "A monolithic GaAs-on-Si receiver front end for optical interconnect systems," IEEE Journal of Solid-State Circuits, 28(6), 622-30 (1993). [more info] G. S. Solomon, G. Roos and J. S. Harris, "The effect of Si planar doping on DX centers in Al{sub 0.26}Ga{sub 0.74}As," Proceedings of the 7th International Conference on Molecular Beam Epitaxy - MBE-VII; Aug 24-28 1992; Schwaebisch Gmuend, Ger, 127(1), 737-41 (1993). [more info] G. S. Solomon, G. Roos and J. S. Harris, "The effect of Si planar doping on DX centers in Al0.26Ga0.74As," Journal of Crystal Growth, 127(1-4), 737-741 (1993). [more info]
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