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  • C. W. Coldren, S. G. Spruytte, J. S. Harris and M. C. Larson, "Group III nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy," Journal of Vacuum Science & Technology B, 18(3), 1480-1483 (2000). [more info]

  • L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, M. M. Fejer, B. Gerard and E. Lallier, "Quasi-phasematched frequency conversion in thick all-epitaxial, orientation-patterned GaAs films," , Proc. Topical Meeting on Advanced Solid-State Lasesr (ASSL) 2000, Davos, Switzerland (2000). [more info]

  • L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. A. E. C. B. Ebert, J. S. A. H. J. S. Harris, M. M. A. F. M. M. Fejer, B. A. G. B. Gerard, K. A. B. K. Becouarn and E. A. L. E. Lallier, "All-epitaxial orientation-patterned GaAs for nonlinear optical frequency conversion," , Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE (2000). [more info]

  • L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. A. E. C. B. Ebert, J. S. A. H. J. S. Harris, M. M. A. F. M. M. Fejer, B. A. G. B. Gerard, L. A. B. L. Becouarn and E. A. L. E. Lallier, "Thick (200 μm) orientation-patterned GaAs for bulk quasi-phase-matched nonlinear frequency conversion," , Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on (2000). [more info]

  • Y. Gotoh, K. Matsumoto, V. Bubanja, F. Vazquez, T. Maeda and J. S. Harris, "Experimental and simulated results of room temperature single electron transistor formed by atomic force microscopy nano-oxidation process," Solid State Devices and Materials. 1999 International Conference, 21-24 Sept. 1999, Tokyo, Japan, 39(4), 2334-7 (2000). [more info]

  • Y. Gotoh, K. Matsumoto, T. Maeda, E. B. Cooper, S. R. Manalis, H. Fang, S. C. Minne, T. Hunt, H. Dai, J. Harris and C. F. Quate, "Experimental and theoretical results of room-temperature single-electron transistor formed by the atomic force microscope nano-oxidation process," , The 46th international symposium of the american vacuum society, Seattle, Washington (USA) (2000). [more info]

  • J. S. Harris, "Tunable long-wavelength vertical-cavity lasers: the engine of next generation optical networks?," IEEE Journal of Selected Topics in Quantum Electronics, 6(6), 1145-60 (2000). [more info]

  • P. Krispin, S. G. Spruytte, J. S. Harris and K. H. Ploog, "Electrical depth profile of p-type GaAs/Ga(As, N)/GaAs heterostructures determined by capacitance-voltage measurements," Journal of Applied Physics, 88(7), 4153-8 (2000). [more info]

  • H. L. Kung, D. A. B. Miller, P. Atanackovic, C. C. Lin, J. S. Harris, L. Carraresi, J. E. Cunningham and W. Y. Jan, "Wavelength monitor based on two single-quantum-well absorbers sampling a standing wave pattern," Applied Physics Letters, 76(22), 3185-7 (2000). [more info]

  • M. C. Larson, C. W. Coldren, S. G. Spruytte, H. E. Petersen and J. S. Harris, "Low-threshold oxide-confined GaInNAs long wavelength vertical cavity lasers," IEEE Photonics Technology Letters, 12(12), 1598-600 (2000). [more info]

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