B. E. Nelson, M. Gerken, D. A. B. Miller, R. A. P. R. Piestun, A. C.-C. L. Chien-Chung Lin and J. S. J. A. H. J. S. Harris, Jr., "Wavelength demultiplexing by beam shifting using a dielectric stack as a one-dimensional photonic crystal," , Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE (2000). [more info] Y. Okada, Y. Iuchi, M. Kawabe and J. S. Harris, "Basic properties of GaAs oxide generated by scanning probe microscope tip-induced nano-oxidation process," Journal of Applied Physics, 88(2), 1136-40 (2000). [more info] T. J. Pinguet, L. A. Eyres, C. B. Ebert, O. A. L. O. Levi, M. M. A. F. M. M. Fejer and J. S. A. H. J. S. Harris, "Epitaxial orientation-patterning of AlGaAs films for nonlinear optical devices," , Compound Semiconductors, 2000 IEEE International Symposium on (2000). [more info] S. G. Spruytte, C. W. Coldren, M. C. Larson and J. S. A. H. J. S. Harris, "Incorporation of nitrogen in group III-nitrides-arsenides grown by molecular beam epitaxy (MBE)," , Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International (2000). [more info] S. G. Spruytte, C. W. Coldren, A. F. Marshall and J. S. Harris, "Compositional Evolution and Structural Changes during Anneal of Group III-Nitride-arsenide Alloys,"," , Proc. MRS Spring 2000 Meeting, San Francisco, CA (2000). [more info] S. G. Spruytte, C. W. Coldren, A. F. Marshall, M. C. Larson and J. S. Harris, "MBE growth of nitride-arsenide materials for long wavelength opto-electronics," Mrs Internet Journal of Nitride Semiconductor Research, 5, W8.4 (2000). [more info] S. G. Spruytte, M. C. Larson, W. Wampler, C. W. A. C. C. W. Coldren and J. S. A. H. J. S. Harris, "Molecular beam epitaxial growth of group III-nitride-arsenides for long wavelength optoelectronics," , Compound Semiconductors, 2000 IEEE International Symposium on (2000). [more info] T. Takayama, M. Yuri, K. Itoh, T. Baba and J. S. Harris, "Analysis of unstable two-phase region in wurtzite group III nitride ternary alloy using modified valence force field model," Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 39(9), 5057-5062 (2000). [more info] T. Takayama, M. Yuri, K. Itoh, T. Baba and J. S. Harris, "Theoretical analysis of unstable two-phase region and microscopic structure in wurtzite and zinc-blende InGaN using modified valence force field model," Journal of Applied Physics, 88(2), 1104-10 (2000). [more info] M. B. Yairi, H. V. Demir, C. W. Coldren, J. S. A. H. J. S. Harris and D. A. D. A. M. D. A. D. Miller, "Demonstration of an optoelectronic dual-diode optically controlled optical gate with a 20 picosecond repetition period," , Nonlinear Optics: Materials, Fundamentals, and Applications, 2000. Technical Digest (2000). [more info]
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