P. Krispin, S. G. Spruytte, J. S. Harris and K. H. Ploog, "Admittance dispersion of n-type GaAs/Ga(As, N)/GaAs heterostructures grown by molecular beam epitaxy," Journal of Applied Physics, 90(5), 2405-10 (2001). [more info] P. Krispin, S. G. Spruytte, J. S. Harris and K. H. Ploog, "Deep-level defects in MBE-grown Ga(As,N) layers," 21st International Conference on Defects in Semiconductors. ICDS-21, 16-20 July 2001, Giessen, Germany, 308/310, 870-3 (2001). [more info] P. Krispin, S. G. Spruytte, J. S. Harris and K. H. Ploog, "Origin and annealing of deep-level defects in p-type GaAs/Ga(As,N)/GaAs heterostructures grown by molecular beam epitaxy," Journal of Applied Physics, 89(11), 6294-2 (2001). [more info] H. Liu, C. C. Lin and J. S. Harris, "High-speed, dual-function vertical cavity multiple quantum well modulators and photodetectors for optical interconnects," Optical Engineering, 40(7), 1186-1191 (2001). [more info] "Guidelines for the management of intravascular catheter-related infections," Infection Control and Hospital Epidemiology, 22(4), 222-242 (2001). [more info] R. R. Sauers and J. S. Harris, "A computational study of tetrahedrene: Strained alkene or dicarbene?," Journal of Organic Chemistry, 66(24), 7951-7954 (2001). [more info] S. Spruytte, C. Coldren, J. Harris, D. Pantelidis, H. J. Lee, J. Bravman and M. Kelly, "Use of angle resolved x-ray photoelectron spectroscopy for determination of depth and thickness of compound layer structures," Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 19(2), 603-608 (2001). [more info] S. G. Spruytte, C. W. Coldren, J. S. Harris, W. Wampler, P. Krispin, K. Ploog and M. C. Larson, "Incorporation of nitrogen in nitride-arsenides: Origin of improved luminescence efficiency after anneal," Journal of Applied Physics, 89(8), 4401-6 (2001). [more info] S. G. Spruytte, M. C. Larson, W. Wampler, C. W. Coldren, H. E. Petersen and J. S. Harris, "Nitrogen incorporation in group III-nitride-arsenide materials grown by elemental source molecular beam epitaxy," 11th International Conference on Molecular Beam Epitaxy; Sep 11-15 2000; Bijing, China, 227/228, 506-15 (2001). [more info] T. Takayama, M. Yuri, K. Itoh, T. Baba and J. S. Harris, "Analysis of phase-separation region in wurtzite group III nitride quaternary material system using modified valence force field model," Journal of Crystal Growth, 222(1), 29-37 (2001). [more info]
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