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  • Y. Okada, Y. Iuchi, M. Kawabe and J. S. Harris, "An AlGaAs/GaAs tunnel diode integrated with nanometer-scale atomic force microscope tip-induced oxides," Japanese Journal of Applied Physics, Part 2 (Letters), 38(2), L160-2 (1999). [more info]

  • Y. Okada, Y. Iuchi, M. Kawabe and J. S. Harris, "GaAs/AlGaAs oxide tunnel barriers fabricated by atomic force microscope tip-induced nano-oxidation technique," Compound Semiconductors 1998(162), 337-342 (1999). [more info]

  • G. S. Solomon, "Nearest-neighbor spatial ordering of strain-induced islands using a subsurface island superlattice," Journal of Crystal Growth, 201202, 1190 (1999). [more info]

  • G. S. Solomon, S. Komarov and J. S. Harris, "Nearest-neighbor spatial ordering of strain-induced islands using a subsurface island superlattice," Molecular Beam Epitaxy 1998. Tenth International Conference, 31 Aug.-4 Sept. 1998, Cannes, France, 201/202, 1190-3 (1999). [more info]

  • L. M. K. Vandersypen, C. S. Yannoni, M. H. Sherwood and I. L. Chuang, "Realization of Logically Labeled Effective Pure States for Bulk Quantum Computation," Physical Review Letters, 83(15), 3085 (1999). [more info]

  • M. B. Yairi, C. W. Coldren, D. A. B. Miller and J. S. Harris, "High-speed, optically controlled surface-normal optical switch based on diffusive conduction," Applied Physics Letters, 75(5), 597-9 (1999). [more info]

  • D. Chung, F. L. Merat, F. M. Discenzo and J. S. Harris, "Neural net based torque sensor using birefringent materials," Sensors and Actuators, A: Physical, 70(3), 243-249 (1998). [more info]

  • S. M. Cronenwett, S. M. Maurer, S. R. Patel, C. M. Marcus, C. I. Duruoz and J. S. Harris, "Mesoscopic Coulomb blockade in one-channel quantum dots," Physical Review Letters, 81(26), 5904-5907 (1998). [more info]

  • T. F. Huang and J. S. Harris, "Growth of epitaxial AlxGa1-xN films by pulsed laser deposition," Applied Physics Letters, 72(10), 1158-1160 (1998). [more info]

  • T. F. Huang, T. Ueda, S. Spruytte and J. S. Harris, "Growth and effects of single-crystalline ZnO buffer layer on GaN epitaxy," Compound Semiconductors 1997, 156, 11-14 (1998). [more info]

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