M. C. Larson and J. S. Harris, "Broadly tunable resonant-cavity light emission," Applied Physics Letters, 67(5), 590-2 (1995). [more info]
M. C. Larson and J. S. Harris, "Broadly-tunable resonant-cavity light-emitting diode," IEEE Photonics Technology Letters, 7(11), 1267-9 (1995). [more info]
M. C. Larson, A. R. Massengale and J. S. Harris, "Continuously tunable micro-electromechanical vertical-cavity surface-emitting lasers," International Journal of Optoelectronics, 10(5), 401-8 (1995). [more info]
M. C. Larson, B. Pezeshki and J. S. Harris, "Vertical coupled-cavity microinterferometer on GaAs with deformable-membrane top mirror," IEEE Photonics Technology Letters, 7(4), 382-4 (1995). [more info]
H. Lee, D. B. Oberman, W. Gotz and J. S. Harris, "HETEROEPITAXIAL GROWTH OF GAN ON GAAS BY ECR PLASMA-ASSISTED MBE," Compound Semiconductors 1994(141), 125-130 (1995). [more info]
H. Lee, D. B. Oberman and J. S. Harris, "REACTIVE ION ETCHING OF GAN USING CHF3/AR AND C2CLF5/AR PLASMAS," Applied Physics Letters, 67(12), 1754-1756 (1995). [more info]
D. B. Oberman, H. Lee, W. K. Gotz and J. S. Harris, "Molecular beam epitaxy of gallium nitride by electron cyclotron resonance plasma and hydrogen azide," Proceedings of the 8th International Conference Conference on Molecular Beam Epitaxy. Part 2 (of 2); Aug 29-Sep 2 1994; Osaka, Jpn, 150(1-4), 912-915 (1995). [more info]
D. B. Oberman, H. Lee, W. K. Gotz and J. S. Harris, "MBE GROWTH OF GAN WITH ECR PLASMA AND HYDROGEN AZIDE," Compound Semiconductors 1994(141), 131-136 (1995). [more info]
G. S. Solomon, J. A. Trezza and J. S. Harris, "Substrate temperature and monolayer coverage effects on epitaxial ordering of InAs and InGaAs islands on GaAs," Applied Physics Letters, 66(8), 991-3 (1995). [more info]
G. S. Solomon, J. A. Trezza and J. S. Harris, "Effects of monolayer coverage, flux ratio, and growth rate on the island density of InAs islands on GaAs," Applied Physics Letters, 66(23), 3161-3 (1995). [more info]
