W. Liu, "Ideality factor of extrinsic base surface recombination current inAlGaAs/GaAs heterojunction bipolar transistors," Electronics Letters, 28(4), 379-380 (1992). [more info]
W. Liu, "Current gain of graded AlGaAs/GaAs heterojunction bipolartransistors with and without a base quasi-electric field," IEEE Transactions on Electron Devices, 39(11), 2422 (1992). [more info]
W. Liu, D. Costa and J. S. Harris, "Derivation of the emitter-collector transit time of heterojunction bipolar transistors," Solid-State Electronics, 35(4), 541-5 (1992). [more info]
W. Liu, D. Costa and J. S. Harris, "A simplified model for the distributed base contact impedance in heterojunction bipolar transistors," Solid-State Electronics, 35(4), 547-52 (1992). [more info]
W. Liu, D. Costa and J. S. Harris, "Derivation of the emitter-collector transit time of heterojunction bipolar transistors," Solid State Electronics, 35, 541-545 (1992). [more info]
W. Liu, C. Dai and J. S. Harris, "An advantage of Pnp over Npn AlGaAs/GaAs Heterojunction Bipolar Transistors for Microwave Power Application," Japanese Journal of Applied Physics, 31(L452-4) (1992). [more info]
W. Liu, C. Dai and J. S. Harris, "Contact Impedance in Heterojunction Biopolar Transistors," Solid State Electronics, 35, 547-552 (1992). [more info]
W. Liu and J. S. Harris, "Diode ideality factor for surface recombination current in AlGaAs/GaAs heterojunction bipolar transistors," IEEE Transactions on Electron Devices, 39(12), 2726-32 (1992). [more info]
W. Liu and J. S. Harris, "Effects of emitter-base contact spacing on the current gain in heterojunction bipolar transistors," Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), 31(8), 2349-51 (1992). [more info]
W. Liu and J. S. Harris, "Mesa surface recombination current in AlGaAs/GaAs heterojunction bipolar transistors with an emitter-base-emitter structure," Journal of Vacuum Science & Technology B (Microelectronics Processing and Phenomena), 10(4), 1285-90 (1992). [more info]
