W. Liu and J. S. Harris, "Effects of replacing a portion of the AlGaAs base-emitter junction of heterojunction bipolar transistors by GaAs," International Journal of Electronics, 72(3), 401-8 (1992). [more info]
W. Liu and J. S. Harris, "Parasitic conduction current in the passivation ledge of AlGaAs/GaAs heterojunction bipolar transistors," Solid-State Electronics, 35(7), 891-5 (1992). [more info]
W. Liu and J. S. Harris, "Current dependence of base-collector capacitance of bipolar transistors," Solid-State Electronics, 35(8), 1051-7 (1992). [more info]
W. Liu and J. S. Harris, "Dependence of the Base Crowding Effect on Base Doping and Thickness for Npn AlGaAs/GaAs HBTs," Electronics Letters, 27(22), 2048-2050 (1992). [more info]
W. Liu, D. Hill, D. Costa and J. S. Harris, "High-performance microwave AlGaAs-InGaAs Pnp HBT with high-DC current gain," IEEE microwave and guided wave letters, 2(8), 331-333 (1992). [more info]
W. Liu and S. D. Kim, "A high-gain AlGaAs/GaAs heterojunction bipolar transistor grown on silicon substrate," Japanese journal of applied physics. Supplement, 31(9A), 2656 (1992). [more info]
S. M. Lord and J. S. Harris, "Investigation of high In content InGaAs quantum wells grown on GaAsby molecular beam epitaxy," Electronics Letters, 28(13), 1193-1195 (1992). [more info]
S. M. Lord, B. Pezeshki, A. F. Marshall, J. S. Harris, R. Fernandez and A. Harwit, "Graded BufferLayers for Molecular Beam Epitaxial Growth of High In Content InGaAs on GaAs for Optoelectronics," Proc. MRS Fall Meeting, 221-225 (1992). [more info]
S. M. Lord, G. Roos, B. Pezeshki and J. S. Harris, "Hydogen Passivation of Defects in InGaAs/Al(x0Ga(1-x)As Quantum Wells," Proc. MRS Spring Meeting, 262, 881-6 (1992). [more info]
S. M. Lord, G. Roos, B. Pezeshki, J. S. Harris and N. M. Johnson, "Enhancement of photoluminescence intensity in InGaAs/Al{sub x}Ga{sub 1-x}As quantum wells by hydrogenation," Applied Physics Letters, 60(18), 2276-8 (1992). [more info]
