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  • W. Liu, D. Costa and J. J. Harris, "Comparison of the effects of surface passivation and base quasi-electric fields on the current gain of AlGaAs/GaAs heterojunction bipolar transistors grown on GaAs and Si substrates," Applied Physics Letters, 59(6), 691-693 (1991). [more info]

  • W. Liu and J. S. Harris, "Dependence of base crowding effect on base doping and thickness for Npn AlGaAs/GaAs HBTs," Electronics Letters, 27(22), 2048-50 (1991). [more info]

  • W. U. Liu, D. Costa and J. S. Harris, "Theoretical comparison of base bulk recombination current and surface recombination current of a mesa AlGaAs/GaAs heterojunction bipolar transistor," Solid-State Electronics, 34(10), 1119-23 (1991). [more info]

  • K. Matsumoto, M. Ishii, H. Morozumi, S. Imai, K. Sakamoto, Y. Hayashi, W. Liu, D. Costa, T. Ma, A. Massengale and J. S. Harris, "Accumulation-mode GaAlAs/GaAs bipolar transistor," Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), 30(12), 3846-9 (1991). [more info]

  • B. G. Park, E. Wolak and J. S. Harris, "Effect of high current density and doping concentration on the characteristics of GaAs/AlAs vertically integrated resonant tunneling diodes," Journal of Applied Physics, 70(11), 7141-8 (1991). [more info]

  • B. Pezeshki, R. B. Apte, S. M. Lord and J. S. Harris, "Quantum well modulators for optical beam steering applications," IEEE Photonics Technology Letters, 3(9), 790-2 (1991). [more info]

  • B. Pezeshki, S. M. Lord and J. S. Harris, "Electroabsorption modulators in InGaAs/AlGaAs," Applied Physics Letters, 59(8), 888-90 (1991). [more info]

  • B. Pezeshki, D. Thomas and J. S. Harris, "Novel cavity design for high reflectivity changes in a normally off electroabsorption modulator," Applied Physics Letters, 58(8), 813-15 (1991). [more info]

  • P. Pezeshki, S. M. Lord, T. B. Boykin, B. L. Shoop and J. S. Harris, "AlGaAs/AlAs QW modulator for 6328 AA operation," Electronics Letters, 27(21), 1971-3 (1991). [more info]

  • J. J. L. Rascol, K. P. Martin, R. E. Carnahan, R. J. Higgins, L. Cury, J. C. Portal, B. G. Park, E. Wolak, K. L. Lear and J. S. Harris, "Ballistic electron contributions in vertically integrated resonant tunneling diodes," Superlattices and Microstructures, 10(2), 175-8 (1991). [more info]

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