Y. Rong, Y. Ge, Y. Huo, M. Fiorentino, M. R. T. Tan, T. I. Kamins, T, J. Ochalski, G. Huyet, J. S. Harris Jr, "Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si," IEEE J. Select. Topics Quan. Electron, 16(1), 85-92 (2010). [more info] R. Kudrawiec, T. Sarmiento, P. Poloczek, J. Misiewicz, James S. Harris, "Photoreflectance and photoluminescence study of GaInNAsSb layers lattice matched to InP," J. Appl. Phys., 107, 043523-1-6 (2010). [more info] Seongjae Cho, Shinichi O’uchi, Kazuhiko Endo, Sang Wan Kim, Younghwan Son, In Man Kang, Meishoku Masahara, James S. Harris, Jr., and Byung-Gook Park, "Rigorous Design of 22-nm Node 4-Terminal SOI FinFETs for Reliable Low Standby Power Operation with Semi-empirical Parameters," Journal of Semiconductor Technology and Science, 10(4), 265-275 (2010). [more info] B. Ellis, T. Sarmiento, M. Mayer, B. Zhang, J. S. Harris, E. Haller, and J. Vuckovic, "Electrically pumped photonic crystal nanocavity light sources using a laterally doped p-i-n junction," Appl. Phys. Lett., 96, 181103 (2010). [more info] Y. Gong, B. Ellis, G. Shambat, T. Sarmiento, J. S. Harris, and J. Vuckovic, "Nanobeam photonic crystal cavity quantum dot laser," Opt. Express, 18, 781-779 (2010). [more info] R. Kudrawiec, P. Poloczek, J. Misiewicz, H. P. Bae, T. Sarmiento, S. R. Bank, H. B. Yuen, M. A. Wistey, J. S. Harris, Jr., "Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1.5–1.65 µm: Broadening of the fundamental transition," Appl. Phys. Lett., 94(3), 031903-1-3 (2009). [more info] D. Choi, J. Cagnon, E. Kim, S. Stemmer, P.C. McIntyre and J.S. Harris, "High quality III-V materials growth on Si (100) substrate via Ge buffer," J. Crystal Growth., 311, 1962-71 (2009). [more info] Larkhoon Leem, James S. Harris, "Magnetic coupled spin-torque devices for nonvolatile logic applications," J. Appl. Phys., 105(7), 07D102-5 (2009). [more info] D. Englund, B. Ellis, E. Edwards, T. Sarmiento, J. S. Harris, D. A. B. Miller, and J. Vuckovic, "Electrically controlled modulation in a photonic crystal nanocavity," Opt. Express, 17, 15409-15419 (2009). [more info] T. Sarmiento, H. P. Bae, T. D. O'Sullivan, J. S. Harris, Jr., "GaAs-based 1.53 μ m GaInNAsSb vertical cavity surface emitting lasers," Electron. Lett., 45(19), 978-79 (2009). [more info]
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