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  • J. Pan, Y. Huo, K. Yamanaka, S. Sandhu, L. Scaccabarozzi, R. Timp, M. L. Povinelli, S. Fan, M. M. Fejer, J. S. Harris, "Aligning microcavity resonances in silicon photonic-crystal slabs using laser-pumped thermal tuning," Virtual J. Nanoscale Sci. & Techn. (2008). [more info]

  • J. E. Schaar, K. L. Vodopyanov, P. S. Kuo, M. M. Fejer, X. Yu, A. Lin, J. S. Harris, D. Bliss, C. Lynch, V. G. Kozlov, "Terahertz sources based on intracavity parametric down-conversion in quasi-phase-matched gallium arsenide Source," IEEE J. Sel. Topics Quantum Electron., 14(2), 354-362 (2008). [more info]

  • P. Ardalan, E. R. Pickett, J. S. Harris, A. F. Marshall, S. F. Bent, "Formation of an oxide-free Ge/TiO2 interface by atomic layer deposition on brominated Ge Source," Appl. Phys. Lett., 92(25), 252902-1-3 (2008). [more info]

  • B. Shin, D. Choi, J. S. Harris, P. C. Mclntyre, "Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2Ga0.8As and deposition of ultrathin Al2O3 gate insulators," Appl. Phys. Lett., 93(5), 052911-1-3 (2008). [more info]

  • D. Choi, Y. Ge, J. Cagnon, S. Stemmer and J.S. Harris, "Low surface roughness and threading dislocation Ge growth on Si (001) substrate," J. Crystal Growth., 310, 4273-4279 (2008). [more info]

  • R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, J. Misiewicz, "On the Fermi level pinning in as-grown GaInNAs(Sb)/GaAs quantum wells with indium content of 8%-32%," J. Appl. Phys., 104(3), 033526-1-6 (2008). [more info]

  • A. Khalili, X.H. Lim, H. Bae, J.S. Harris, "Analysis of Active Hybrid Fiber-Semiconductor Devices for Optical Networks," IEEE J. Quantum Electron., 44(11), 1042-1054 (2008). [more info]

  • S. M. Kim, H. B. Yuen, F. Hatami, A. Chin, J. S. Harris, "Optical Properties of Dilute Nitride InN(As)Sb Quantum Wells and Quantum Dots Grown by Molecular Beam Epitaxy," J. Electronic Matls., 37(12), 1774-79 (2008). [more info]

  • C. Lynch, D.F. Bliss, T. Zens, A. Lin, J.S. Harris, P.S. Kuo, M.M. Fejer, "Growth of mm-thick orientation-patterned GaAs for IR and THZ generation," J. Crystal Growth., 310(24), 5241-5247 (2008). [more info]

  • H. P. Bae, S. R. Bank, H. B. Yuen, T. Sarmiento, E. R. Pickett, M. A. Wistey and J. S. Harris, "Temperature dependencies of annealing behaviors of GaInNAsSb/GaNAs quantum wells for long wavelength dilute-nitride lasers," Applied Physics Letters, 90(23), 231119-3 (2007). [more info]

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