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  • James S. Harris, Hopil Bae and Tomás Sarmiento, "GaInNAs(Sb) Long-Wavelength VCSELs," VCSELs, Fundamentals, Technology and Applications of Vertical-Cavity Surface-Emitting Lasers, Ch 11 (2012). [more info]

  • Keith Mathieson, James Loudin, Georges Goetz, Philip Huie, Lele Wang, Theodore I. Kamins, Ludwig Galambos, Richard Smith, James S. Harris, Alexander Sher, Daniel Palanker, "Photovoltaic retinal prosthesis with high pixel density," Nature Photonics, 6, 391-397 (2012). [more info]

  • Lele Wang, K. Mathieson, T. I. Kamins, J. D. Loudin, L. Galambos, G. Goetz, Y. Mandel, P. Huie, D. Lavinsky, J. S. Harris, D. V. Palanker, "Photovoltaic retinal prosthesis: implant fabrication and performance," J. Neural Engineering, 9(4) (2012). [more info]

  • Yijie Huo, Hai Lin, Robert Chen, Maria Makarova, Yiwen Rong, Mingyang Li, Theodore I. Kamins, Jelena Vuckovic, James S. Harris, "Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxy," Applied Physics Letters, 98, 011111 (2011). [more info]

  • Hai Lin, Yijie Huo, Yiwen Rong, Robert Chen, Theodore I. Kamins, James S. Harris, "X-ray diffraction analysis of step-graded InxGa1−xAs buffer layers grown by molecular beam epitaxy," Journal of Crystal Growth, 323(1), 17-20 (2011). [more info]

  • Hai Lin, Robert Chen, Yijie Huo, Theodore I. Kamins, and James S. Harris, "Raman study of strained Ge1−xSnx alloys," Applied Physics Letters, 98, 261917 (2011). [more info]

  • Seongjae Cho, Robert Chen, Sukmo Koo, Gary Shambat, Hai Lin, Namkyoo Park, Jelena Vuckovic, Theodore I. Kamins, Byung-Gook Park, James S. Harris, "Fabrication and Analysis of Epitaxially Grown Ge Sn Microdisk Resonator With 20-nm Free-Spectral Range," IEEE Photonics Technology Letters, 23(20), 1535-1537 (2011). [more info]

  • Robert Chen, Hai Lin, Yijie Huo, Charles Hitzman, Theodore I. Kamins, and James S. Harris, "Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxy," Applied Physics Letters, 99, 181125 (2011). [more info]

  • Suyog Gupta, Robert Chen, Blanka Magyari-Kope, Hai Lin, Bin Yang, Aneesh Nainan, Yoshio Nishi, James S. Harris, Krishna C. Saraswat, "GeSn technology: Extending the Ge electronics roadmap," IEEE Electron Devices Meeting (IEDM), 16.6.1 - 16.6.4 (2011). [more info]

  • Seongjae Cho, In Man Kang, Theodore I. Kamins, Byung-Gook Park, and James S. Harris, Jr., "Silicon-compatible compound semiconductor tunneling field-effect transistor for high performance and low standby power operation," Applied Physics Letters, 99, 243505 (2011). [more info]

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